生命周期: | Active | Reach Compliance Code: | compliant |
风险等级: | 5.2 | 其他特性: | N-M, I/P POWER-MAX(PEAK)=1000W |
标称衰减: | 6 dB | 特性阻抗: | 50 Ω |
构造: | COAXIAL | 最大输入功率 (CW): | 50 dBm |
JESD-609代码: | e4 | 最大工作频率: | 2500 MHz |
最小工作频率: | 最高工作温度: | 125 °C | |
最低工作温度: | -55 °C | 射频/微波设备类型: | FIXED ATTENUATOR |
端子面层: | GOLD | 最大电压驻波比: | 1.3 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N1011 | ETC |
获取价格 |
germanium transistors | |
2N1015 | DIGITRON |
获取价格 |
TRANSISTOR,BJT,NPN,30V V(BR)CEO,7.5A I(C),TO-82 | |
2N1015 | NJSEMI |
获取价格 |
SIGNAL OR COMPUTER DIODE | |
2N1015A | NJSEMI |
获取价格 |
SIGNAL OR COMPUTER DIODE | |
2N1015B | APITECH |
获取价格 |
Power Bipolar Transistor, 7.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, | |
2N1015B | NJSEMI |
获取价格 |
SIGNAL OR COMPUTER DIODE | |
2N1015C | APITECH |
获取价格 |
Power Bipolar Transistor, 7.5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, | |
2N1015C | NJSEMI |
获取价格 |
SIGNAL OR COMPUTER DIODE | |
2N1015D | APITECH |
获取价格 |
Power Bipolar Transistor, 7.5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, | |
2N1015D | NJSEMI |
获取价格 |
SIGNAL OR COMPUTER DIODE |