生命周期: | Active | 零件包装代码: | TO-82 |
包装说明: | TO-82, 2 PIN | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.37 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 7.5 A | 集电极-发射极最大电压: | 100 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 10 |
JESD-30 代码: | O-MBPM-D2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 极性/信道类型: | NPN |
功耗环境最大值: | 150 W | 最大功率耗散 (Abs): | 150 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | SOLDER LUG |
端子位置: | BOTTOM | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 0.02 MHz | VCEsat-Max: | 1.5 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N1015C | APITECH |
获取价格 |
Power Bipolar Transistor, 7.5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, | |
2N1015C | NJSEMI |
获取价格 |
SIGNAL OR COMPUTER DIODE | |
2N1015D | APITECH |
获取价格 |
Power Bipolar Transistor, 7.5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, | |
2N1015D | NJSEMI |
获取价格 |
SIGNAL OR COMPUTER DIODE | |
2N1015E | APITECH |
获取价格 |
Power Bipolar Transistor, 7.5A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, | |
2N1015E | NJSEMI |
获取价格 |
SIGNAL OR COMPUTER DIODE | |
2N1015F | APITECH |
获取价格 |
Power Bipolar Transistor, 7.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, | |
2N1016 | APITECH |
获取价格 |
Power Bipolar Transistor, 7.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, | |
2N1016A | APITECH |
获取价格 |
Power Bipolar Transistor, 7.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, | |
2N1016B | MICROSEMI |
获取价格 |
Power Bipolar Transistor |