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2FAF-C10R PDF预览

2FAF-C10R

更新时间: 2024-11-16 02:56:47
品牌 Logo 应用领域
伯恩斯 - BOURNS /
页数 文件大小 规格书
4页 230K
描述
Integrated Passive & Active Device

2FAF-C10R 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8504.50.80.00
风险等级:5.84认证:IEC
电容:30 µF最大直流电阻:120 Ω
滤波器类型:DATA LINE FILTER高度:0.457 mm
JESD-609代码:e0长度:2.032 mm
安装类型:SURFACE MOUNT功能数量:4
最高工作温度:85 °C最低工作温度:-40 °C
包装方法:TAPE AND REEL物理尺寸:L2.032XB1.375XH0.457 (mm)/L0.08XB0.054XH0.018 (inch)
端子面层:TIN LEAD宽度:1.375 mm
Base Number Matches:1

2FAF-C10R 数据手册

 浏览型号2FAF-C10R的Datasheet PDF文件第2页浏览型号2FAF-C10R的Datasheet PDF文件第3页浏览型号2FAF-C10R的Datasheet PDF文件第4页 
Features  
Applications  
Lead free versions available  
RoHS compliant (lead free version)*  
Bidirectional EMI filtering  
ESD protection > 25 k volts  
Protects 4 data lines  
Cell phones  
PDAs and notebooks  
Digital cameras  
MP3 players and GPS  
2FAF-C10R - Integrated Passive & Active Device  
General Information  
The 2FAF-C10R device, manufactured using Thin Film on Silicon  
technology, provides ESD protection and EMI filtering for the data  
ports of portable electronic devices such as cell phones, modems  
and PDAs. The device incorporates four low pass filter channels  
where each channel has a series 100 ohm resistor assuring a  
minimum of –28 dB attenuation from 800 MHz to 3 GHz. The device  
is suitable for EMI filtering of GSM, CDMA, W-CDMA, WLAN and  
Bluetooth frequencies.  
SOLDER  
BUMPS  
SILICON  
DIE  
Each internal and external port of the four channels includes a TVS  
diode for ESD protection. The ESD protection provided by the  
component enables a data port to withstand a minimum 8 ꢀV  
Contact / 1ꢁ ꢀV Air Discharge per the ESD test method specified in  
IEC 61000-4-2. The device measures 1.33 mm x 2 mm and is  
available in a 10 bump CSP package intended to be mounted directly  
onto an FR4 printed circuit board. The CSP device meets typical  
thermal cycle and bend test specifications without the use of an  
underfill material.  
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Per Line Specification  
Resistance  
Symbol  
R
Min.  
80  
Nom.  
Max.  
120  
36  
Unit  
pF  
V
100  
30  
Capacitance @ 2.ꢁ V, 1 MHz  
Rated Standoff Voltage  
Breakdown Voltage @ 1 mA  
Forward Voltage @ 10 mA  
Leakage Current @ 3.3 V  
Filter Attenuation @ 800-3000 MHz  
C
24  
VWM  
VBR  
VF  
ꢁ.0  
6.0  
-28  
V
0.8  
0.0ꢁ  
-3ꢁ  
V
IR  
0.1  
µA  
dB  
S21  
ESD Protection: IEC 61000-4-2  
Contact Discharge  
8
1ꢁ  
kV  
kV  
Air Discharge  
Power Dissipation per Resistor  
PD  
100  
mW  
Thermal Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
TJ  
Min.  
-40  
Nom.  
+2ꢁ  
Max.  
+8ꢁ  
Unit  
°C  
Operating Temperature Range  
Storage Temperature Range  
TSTG  
-ꢁꢁ  
+2ꢁ  
+1ꢁ0  
°C  
*RoHS Directive 2002/95/EC Jan 27 2003, including Annex  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  

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