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2FAM-C5R PDF预览

2FAM-C5R

更新时间： 2024-11-16 02:56:47
品牌 Logo 应用领域
伯恩斯 - BOURNS /
页数 文件大小 规格书
4页 239K
描述
Integrated Passive & Active Device using CSP

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中文翻译

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2FAM-C5R 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8504.50.80.00风险等级：5.92
电容：40 µF最大直流电阻：12 Ω
滤波器类型：DATA LINE FILTER高度：0.559 mm
JESD-609代码：e0长度：1.375 mm
安装类型：SURFACE MOUNT功能数量：2
最高工作温度：85 °C最低工作温度：-40 °C
包装方法：TAPE AND REEL物理尺寸：L1.375XB1.001XH0.559 (mm)/L0.054XB0.039XH0.022 (inch)
端子面层：Tin/Lead (Sn/Pb)宽度：1.001 mm
Base Number Matches：1

2FAM-C5R 数据手册

 浏览型号2FAM-C5R的Datasheet PDF文件第2页浏览型号2FAM-C5R的Datasheet PDF文件第3页浏览型号2FAM-C5R的Datasheet PDF文件第4页 
Features  
Applications  
■ Lead free versions available  
■ RoHS compliant (lead free version)*  
■ Bidirectional EMI filtering  
■ ESD protection  
■ Cell phones  
■ PDAs and notebooks  
■ Digital cameras  
■ MP3 players and GPS  
■ Protects two audio lines  
2FAM-C5R - Integrated Passive & Active Device using CSP  
General Information  
The 2FAM-C5R device, manufactured using Thin Film on  
Silicon technology, provides ESD protection and EMI  
filtering for the audio port of portable electronic devices  
such as cell phones, modems and PDAs. The device  
incorporates two low pass filter channels where each  
channel has a series 10 ohm resistor assuring a minimum  
of -25 dB attenuation from 800 MHz to 3 GHz. The device  
is suitable for EMI filtering of GSM, CDMA, W-CDMA,  
WLAN and Bluetooth frequencies.  
SOLDER  
BUMPS  
SILICON  
DIE  
Each internal and external port of the two channels  
includes a TVS diode for ESD protection. The ESD  
protection provided by the component enables a data  
port to withstand a minimum 8 ꢀV Contact ꢁ 15 ꢀV Air  
Discharge per the ESD test method specified in IEC  
61000-4-2. The device measures 1.00 mm x 1.33 mm and  
is available in a 5 bump CSP package intended to be  
mounted directly onto an FR4 printed circuit board. The  
CSP device meets typical thermal cycle and bend test  
specifications without the use of an underfill material.  
Electrical & Thermal Characteristics  
Electrical Characteristics  
Symbol  
Minimum  
Nominal  
Maximum  
Unit  
(TA = 25 °C unless otherwise noted)  
Per Line Specification  
Resistance  
R
C
VWM  
VBR  
VF  
8
32  
10  
40  
5.0  
12  
48  
Ω
pF  
V
V
V
Capacitance @ 0 V 1 MHz  
Rated Standoff Voltage  
Breakdown Voltage @ 1 mA  
Forward Voltage @ 10 mA  
Leakage Current @ 3.3 V  
6.0  
-25  
0.8  
0.1  
-30  
IR  
S21  
0.5  
µA  
dB  
Filter Attenuation @ 800 - 3000 MHz  
ESD Protection: IEC 61000-4-2  
Contact Discharge  
8
15  
kV  
kV  
Air Discharge  
Thermal Characteristics  
(TA = 25 °C unless otherwise noted)  
Operating Temperature Range  
Storage Temperature Range  
Power Dissipation Per Resistor  
TJ  
TSTG  
PD  
-40  
-55  
25  
25  
+85  
+150  
100  
°C  
°C  
mW  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
1234

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