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2FAK-C15R PDF预览

2FAK-C15R

更新时间： 2024-11-16 02:56:47
品牌 Logo 应用领域
伯恩斯 - BOURNS 数据线路滤波器过滤器LTE
页数 文件大小 规格书
4页 222K
描述
Integrated Passive & Active Device using CSP

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中文翻译

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2FAK-C15R 技术参数

生命周期：ObsoleteReach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8504.50.80.00
风险等级：5.83认证：IEC
电容：30 µF最大直流电阻：120 Ω
滤波器类型：DATA LINE FILTER高度：0.457 mm
JESD-609代码：e0长度：3.005 mm
安装类型：SURFACE MOUNT功能数量：8
最高工作温度：85 °C最低工作温度：-40 °C
包装方法：TAPE AND REEL物理尺寸：L3.005XB1.375XH0.457 (mm)/L0.118XB0.054XH0.018 (inch)
端子面层：TIN LEAD宽度：1.375 mm
Base Number Matches：1

2FAK-C15R 数据手册

 浏览型号2FAK-C15R的Datasheet PDF文件第2页浏览型号2FAK-C15R的Datasheet PDF文件第3页浏览型号2FAK-C15R的Datasheet PDF文件第4页 
Features  
Applications  
■ Lead free versions available  
■ RoHS compliant (lead free version)*  
■ Bidirectional EMI filtering  
■ Four individual TVS diodes  
■ ESD protection  
■ Cell phones  
■ PDAs and notebooks  
■ Digital cameras  
■ MP3 players and GPS  
■ Protects 8 lines (4+4)  
2FAK-C15R - Integrated Passive & Active Device using CSP  
General Information  
The 2FAK-C15R device, manufactured using Thin Film on  
Silicon technology, provides ESD protection and EMI  
filtering for the data port of portable electronic devices  
such as cell phones, modems and PDAs. The device  
incorporates four low pass filter channels where each  
channel has a series 100 ohm resistor assuring a  
minimum of -30 dB attenuation from 800 MHz to 3 GHz.  
The device is suitable for EMI filtering of GSM, CDMA,  
W-CDMA, WLAN and Bluetooth frequencies. In addition,  
four individual TVS diodes are provided for ESD  
protection.  
SOLDER  
BUMPS  
SILICON  
DIE  
Each internal and external port of the six channels  
includes a TVS diode for ESD protection. The ESD  
protection provided by the component enables a data  
port to withstand a minimum 8 KV Contact ꢀ 15 KV Air  
Discharge per the ESD test method specified in IEC  
61000-4-2. The device measures 1.33 mm x 2.96 mm and  
is available in a 15 bump CSP package intended to be  
mounted directly onto an FR4 printed circuit board. The  
CSP device meets typical thermal cycle and bend test  
specifications without the use of an underfill material.  
Electrical & Thermal Characteristics  
Electrical Characteristics  
Symbol  
Minimum  
Nominal  
Maximum  
Unit  
(TA = 25 °C unless otherwise noted)  
Per Line Specification  
Resistance  
R
C
VWM  
VBR  
VF  
80  
24  
100  
30  
5.0  
120  
36  
Ω
pF  
V
V
V
Capacitance @ 2.5 V 1 MHz  
Rated Standoff Voltage  
Breakdown Voltage @ 1 mA  
Forward Voltage @ 10 mA  
Leakage Current @ 3.3 V  
6.0  
-30  
0.8  
0.1  
-35  
IR  
S21  
0.5  
µA  
dB  
Filter Attenuation @ 800 - 3000 MHz  
ESD Protection: IEC 61000-4-2  
Contact Discharge  
8
15  
kV  
kV  
Air Discharge  
Thermal Characteristics  
(TA = 25 °C unless otherwise noted)  
Operating Temperature Range  
Storage Temperature Range  
Power Dissipation Per Resistor  
TJ  
TSTG  
PD  
-40  
-55  
25  
25  
+85  
+150  
100  
°C  
°C  
mW  
Reliable Electronic Solutions  
Asia-Pacific:  
Europe:  
TEL +886- (0)2 25624117 • FAX +886- (0)2 25624116  
TEL +41-41 768 5555 • FAX +41-41 768 5510  
The Americas: TEL +1-951 781-5492 • FAX +1-951 781-5700  
www.bourns.com  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
1234

中文翻译

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