Datasheet > 2SC5614

2SC5614

更新时间： 2024-11-13 20:39:43

品牌	Logo	应用领域
CEL		/
页数	文件大小	规格书
2页	19K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, M13, 3 PIN

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2SC5614 技术参数

生命周期：	Contact Manufacturer	包装说明：	M13, 3 PIN
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.27
最大集电极电流 (IC)：	0.1 A	基于收集器的最大容量：	1.5 pF
集电极-发射极最大电压：	12 V	配置：	SINGLE
最高频带：	ULTRA HIGH FREQUENCY BAND	JESD-30 代码：	R-PDSO-F3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	4500 MHz	Base Number Matches：	1

2SC5614 数据手册

PRELIMINARY DATA SHEET

NPN SILICON TRANSISTOR NE856M13

OUTLINE DIMENSIONS ^{(Units in mm)}

FEATURES

PACKAGE OUTLINE M13

•

NEW MINIATURE M13 PACKAGE:

– Small transistor outline –

1.0 X 0.5 X 0.5 mm

+0.1

0.5

–0.05

0.3

0.15

–0.05

– Low profile / 0.50 mm package height

– Flat lead style for better RF performance

0.35

•

LOW NOISE FIGURE:

NF = 1.4 dB at 1 GHz

+0.1

–0.05

+0.1

–0.05

1.0

0.7

0.2

0.35

HIGH COLLECTOR CURRENT:

IC MAX = 100 mA

+0.1

–0.05

0.15

0.1

0.2

DESCRIPTION

0.2

Bottom View

+0.1

–0.05

The NE856M13 transistor is designed for low cost amplifier

andoscillatorapplications.Lownoisefigure,highgainandhigh

current capability equate to wide dynamic range and excellent

linearity. NEC's new low profile/flat lead style "M13" package

is ideal for today's portable wireless applications. The NE856

is also available in chip, Micro-x, and eight different low cost

plastic surface mount package styles.

0.5±0.05

0.125

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

EIAJ¹REGISTERED NUMBER

PACKAGE OUTLINE

NE856M13

2SC5614

M13

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz

Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz

Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz

Forward Current Gain at VCE = 3 V, IC = 7 mA

Collector Cutoff Current at VCB = 10 V, IE = 0

Emitter Cutoff Current at VEB = 1 V, IC = 0

GHz

4.5

1.4

|S21E|²

2.5

hFE

145

ICBO

IEBO

µA

CRE

Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz

0.7

1.5

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.

California Eastern Laboratories

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与2SC5614相关器件

型号	品牌	获取价格	描述	数据表
2SC5614(NE856M13)	ETC	获取价格	Discrete
2SC5614-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5614EB	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 100MA I(C) \| SMT
2SC5614-EB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5614EB-T3	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 100MA I(C) \| SMT
2SC5614FB	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 100MA I(C) \| SMT
2SC5614-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5614-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5614FB-T3	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 100MA I(C) \| SMT
2SC5614-T3-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic

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