Datasheet > 2SB967

2SB967

更新时间： 2024-11-18 12:32:43

品牌	Logo	应用领域
TYSEMI		晶体散热片晶体管
页数	文件大小	规格书
1页	62K
描述
Possible to solder the radiation fin directly to printed cicuit board.

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数据手册

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2SB967 数据手册

Product specification

2SB967

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

Features

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Possible to solder the radiation fin directly to printed cicuit board.

Low collector-emitter saturation voltage V^CE(sat).

Large collector current I^C.

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-27

Collector-emitter voltage

Emitter-base voltage

Collector current

-18

-7

-5

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

I^CP

-8

P^C

T^j

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

Testconditons

Min

Typ

Max

Unit

ìA

Collector-base cutoff curent

Emitter-base cutoff current

Collector-emitter voltage

Emitter-base voltage

V^CB= -10 V,I^E= 0

V^EB= -5 V, I^C= 0

I^C= -1mA, I^B= 0

I^E= -10 ìA, I^C= 0

V^CE= -2 V, I^C= 2 A

-100

-1

I^EBO

V^CEO

V^EBO

h^FE

-18

-7

Forward current transfer ratio

Collector-emitter saturation voltage

Transition frequency

625

-1

V^CE(sat)I^C= -3 A, I^B= -0.1 A

f^T

V^CE= -6 V, I^E= -50 mA , f = 200 MHz

V^CB= -20V , I^E= 0 , f = 1.0MHz

120

MHz

Collector output capacitance

C^ob

hFE Classification

Rank

h^FE

90 135

125 205

180 625

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2SB967-Q	KEXIN	获取价格	PNP Transistors
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2SB967R	PANASONIC	获取价格	Power Bipolar Transistor, 5A I(C), 18V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2
2SB967-R	KEXIN	获取价格	PNP Transistors
2SB967RZ	PANASONIC	获取价格	Power Bipolar Transistor, 5A I(C), 18V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3