Datasheet > 1SS362FV(TL3SMMD)

1SS362FV(TL3SMMD)

更新时间： 2024-10-15 07:29:43

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	293K
描述
Rectifier Diode, 2 Element, 0.1A, 85V V(RRM), Silicon

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1SS362FV(TL3SMMD) 数据手册

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1SS362FV

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS362FV

Ultra-High-Speed Switching Applications

Unit: mm

z Small package

z Excellent in forward current and forward voltage

1.2±0.05

0.8±0.05

characteristics:

F (3)

= 0.97 V (typ.)

z Fast reverse recovery time: t = 1.6 ns (typ.)

z Small total capacitance:

C = 0.9 pF (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10 ms)

300 *

100 *

1 *

FSM

1.ANODE1

2.CATHODE2

3.CATHODE1

ANODE2

Power dissipation

150 **

150

°C

Junction temperature

VESM

Storage temperature range

−55 to 150

stg

JEDEC

JEITA

―

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

TOSHIBA

1-1Q1A

Weight: 1.5 mg (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*: Unit rating. Total rating = unit rating × 0.7

**: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm (t))

0.5 mm

0.45 mm

0.4 mm

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 1 mA

Min

Typ.

Max

Unit

―

0.63

0.75

0.97

―

F (1)

Forward voltage

―

= 10 mA

= 100 mA

= 30 V

F (2)

―

1.20

0.1

0.5

―

F (3)

―

R (1)

Reverse current

μA

= 80 V

―

R (2)

Total capacitance

= 0 V, f = 1 MHz

0.9

1.6

Reverse recovery time

= 10 mA

(Fig. 1)

4.0

Start of commercial production

2004-09

2014-03-01

12 3 4

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