Datasheet > 1SS362(TE85L)

1SS362(TE85L)

更新时间： 2024-10-14 21:04:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
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描述
1SS362(TE85L)

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中文翻译

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技术参数
数据手册

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1SS362(TE85L) 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	7.68
Base Number Matches：	1

1SS362(TE85L) 数据手册

1SS362

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS362

Ultra High Speed Switching Application

Unit: mm

z Small package

z Low forward voltage

: V

= 0.97 V (typ.)

F(3)

z Fast reverse recovery time: t = 1.6 ns (typ.)

z Small total capacitance

: C = 0.5 pF (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10ms)

Power dissipation

240 *

80 *

1 *

FSM

100

°C

Junction temperature

125

SSM

Storage temperature

−55 to 125

stg

JEDEC

―

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

JEITA

TOSHIBA

1-2S1C

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

Weight: 2.4 mg (typ.)

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit rating. Total rating = unit rating × 0.7

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 1mA

Min

Typ.

Max

Unit

―

0.63

0.75

0.97

―

F (1)

F (2)

F (3)

R (1)

R (2)

Forward voltage

= 10mA

= 100mA

1.20

0.1

0.5

3.0

4.0

= 30V

Reverse current

μA

= 80V

―

Total capacitance

= 0, f = 1MHz

0.5

1.6

Reverse recovery time

I = 10mA, Fig.1

2009-06-24

12 3 4

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