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1SS184T5LFT PDF预览

1SS184T5LFT

更新时间: 2022-05-21 08:47:04
品牌 Logo 应用领域
东芝 - TOSHIBA 开关
页数 文件大小 规格书
3页 191K
描述
Ultra High-Speed Switching Applications

1SS184T5LFT 数据手册

 浏览型号1SS184T5LFT的Datasheet PDF文件第2页浏览型号1SS184T5LFT的Datasheet PDF文件第3页 
1SS184  
TOSHIBA Diode Silicon Epitaxial Planar Type  
1SS184  
Ultra High-Speed Switching Applications  
Unit: mm  
z Small package: SC-59  
z Low forward voltage: V  
= 0.9 V (typ.)  
F (3)  
z Fast reverse recovery time: t = 1.6 ns (typ.)  
rr  
z Small total capacitance: C = 0.9 pF (typ.)  
T
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Maximum (peak) reverse voltage  
Reverse voltage  
V
85  
80  
V
V
RM  
V
R
Maximum (peak) forward current  
Average forward current  
Surge current (10 ms)  
Power dissipation  
I
300*  
100*  
2*  
mA  
mA  
A
FM  
I
O
I
FSM  
P
150  
mW  
°C  
°C  
Junction temperature  
T
j
125  
Storage temperature  
T
55 to 125  
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
JEDEC  
JEITA  
TO-236MOD  
SC-59  
1-3G1F  
TOSHIBA  
Weight: 0.012 g (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating  
Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
*:  
Unit rating. Total rating = unit rating × 1.5.  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristics  
Symbol  
Test Condition  
= 1 mA  
Min  
Typ.  
Max  
Unit  
V
V
I
I
I
0.60  
0.72  
0.90  
F (1)  
F
F
F
Forward voltage  
V
= 10 mA  
1.20  
0.1  
0.5  
3.0  
4.0  
F (2)  
V
= 100 mA  
= 30 V  
F (3)  
I
V
V
V
I
R (1)  
R
Reverse current  
μA  
I
= 80 V  
R (2)  
R
R
Total capacitance  
C
T
= 0, f = 1 MHz  
0.9  
1.6  
pF  
ns  
Reverse recovery time  
t
= 10 mA (Fig.1)  
rr  
F
Marking  
1
2008-11-18  

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