5秒后页面跳转
1SS187,LF PDF预览

1SS187,LF

更新时间: 2024-02-22 05:57:11
品牌 Logo 应用领域
东芝 - TOSHIBA 快速恢复二极管测试光电二极管
页数 文件大小 规格书
4页 331K
描述
Switching Diodes

1SS187,LF 技术参数

生命周期:Active包装说明:R-PDSO-G3
Reach Compliance Code:unknownFactory Lead Time:12 weeks
风险等级:5.62应用:FAST RECOVERY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.2 V
JESD-30 代码:R-PDSO-G3最大非重复峰值正向电流:2 A
元件数量:1相数:1
端子数量:3最高工作温度:125 °C
最大输出电流:0.1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.15 W参考标准:AEC-Q101
最大重复峰值反向电压:85 V最大反向电流:0.5 µA
最大反向恢复时间:0.004 µs反向测试电压:80 V
表面贴装:YES端子形式:GULL WING
端子位置:DUALBase Number Matches:1

1SS187,LF 数据手册

 浏览型号1SS187,LF的Datasheet PDF文件第2页浏览型号1SS187,LF的Datasheet PDF文件第3页浏览型号1SS187,LF的Datasheet PDF文件第4页 
1SS187  
TOSHIBA Diode Silicon Epitaxial Planar Type  
1SS187  
Unit: mm  
Ultra High Speed Switching Application  
AEC-Q101 Qualified (Note1)  
Small package  
: SC-59  
: V  
Low forward voltage  
= 0.92V (typ.)  
F (3)  
Fast reverse recovery time: t = 1.6ns (typ.)  
rr  
Small total capacitance  
: C = 2.2pF (typ.)  
T
Note1: For detail information, please contact to our sales.  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Maximum (peak) reverse voltage  
Reverse voltage  
V
85  
80  
V
V
RM  
V
R
Maximum (peak) forward current  
Average forward current  
Surge current (10ms)  
I
300  
mA  
mA  
A
FM  
I
100  
O
I
2
FSM  
JEDEC  
TO-236MOD  
Power dissipation  
P
150  
mW  
°C  
°C  
JEITA  
SC-59  
2-3F1S  
TOSHIBA  
Junction temperature  
T
j
125  
Weight: 12 mg (typ.)  
Storage temperature range  
T
stg  
55 to 125  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics  
Characteristic  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
V
V
V
V
I
I
I
=1mA  
0.61  
0.74  
0.92  
F (1)  
F (2)  
F (3)  
R (1)  
R (2)  
F
F
F
Forward voltage  
= 10mA  
= 100mA  
1.20  
0.1  
0.5  
4.0  
4.0  
I
I
V
V
V
= 30V  
R
R
R
Reverse current  
μA  
= 80V  
Total capacitance  
C
T
= 0V, f = 1MHz  
2.2  
1.6  
pF  
ns  
Reverse recovery tme  
t
I
= 10mA (Fig.1)  
F
rr  
Start of commercial production  
1982-06  
1
2017-12-13  

与1SS187,LF相关器件

型号 品牌 描述 获取价格 数据表
1SS187_07 TOSHIBA Ultra High Speed Switching Application

获取价格

1SS187-T RECTRON Rectifier Diode,

获取价格

1SS187T5LT TOSHIBA Ultra High Speed Switching Application

获取价格

1SS187TE85L TOSHIBA Ultra High Speed Switching Application

获取价格

1SS187TE85L2 TOSHIBA DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode

获取价格

1SS187TE85R TOSHIBA DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode

获取价格