Datasheet > 1SS190TE85L2

1SS190TE85L2

更新时间： 2024-02-14 11:49:53

品牌	Logo	应用领域
东芝 - TOSHIBA		光电二极管
页数	文件大小	规格书
3页	191K
描述
DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode

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技术参数
数据手册

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1SS190TE85L2 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.70
风险等级：	5.68	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1.2 V	JESD-30 代码：	R-PDSO-G3
最大非重复峰值正向电流：	2 A	元件数量：	1
端子数量：	3	最高工作温度：	125 °C
最大输出电流：	0.1 A	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
最大功率耗散：	0.15 W	认证状态：	Not Qualified
最大反向电流：	0.5 µA	最大反向恢复时间：	0.004 µs
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	Base Number Matches：	1

1SS190TE85L2 数据手册

1SS190

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS190

Unit: mm

Ultra High Speed Switching Application

z Small package

: SC-59

: V

z Low forward voltage

= 0.92V (typ.)

F (3)

z Fast reverse recovery time: t = 1.6ns (typ.)

z Small total capacitance

: C = 2.2pF (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10ms)

300

100

FSM

Power dissipation

150

°C

JEDEC

Junction temperature

125

JEITA

SC-59

Storage temperature range

−55~125

stg

1-3G1C

TOSHIBA

Weight: 0.012g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics

Test

Circuit

Characteristic

Symbol

Test Condition

= 1mA

Min

Typ.

Max

Unit

―

0.61

0.74

0.92

―

F (1)

F (2)

F (3)

R (1)

R (2)

Forward voltage

= 10mA

= 100mA

1.20

0.1

0.5

4.0

= 30V

Reverse current

μA

= 80V

―

Total capacitance

= 0, f = 1MH

2.2

1.6

Reverse recovery time

I = 10mA (Fig.1)

Marking

2007-11-01

12 3

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