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1SS187-TP-HF PDF预览

1SS187-TP-HF

更新时间: 2024-01-11 14:21:05
品牌 Logo 应用领域
美微科 - MCC 光电二极管
页数 文件大小 规格书
3页 409K
描述
Rectifier Diode,

1SS187-TP-HF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.65
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.15 W最大重复峰值反向电压:80 V
最大反向恢复时间:0.004 µs表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

1SS187-TP-HF 数据手册

 浏览型号1SS187-TP-HF的Datasheet PDF文件第2页浏览型号1SS187-TP-HF的Datasheet PDF文件第3页 
M C C  
TM  
Micro Commercial Components  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
1SS187  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
Halogen free available upon request by adding suffix "-HF"  
150mW High Speed  
Switching Diodes  
80 Volt  
xꢀ Low Forward Voltage  
xꢀ Fast Reverse Recovery Time  
xꢀ Surface Mount SOT-23 Package  
·
Epoxy meets UL 94 V-0 flammability rating  
·
Moisture Sensitivity Level 1  
Marking: D3  
SOT-23  
A
D
Maximum Ratings  
Parameter  
3
Symbol  
VRM  
Rating  
85  
Unit  
1
2
B
C
Non-Repetitive Peak Reverse Voltage  
Reverse Voltage  
V
V
3
VR  
80  
2
1
Average Rectified Output Current  
Forward Continuous Current  
IO  
100  
300  
2.0  
mA  
mA  
A
F
E
IFM  
IFSM  
Non-Repetitive Peak Forward Surge  
Current @ t=8.3ms  
H
G
J
Power Dissipation @ TA=25к  
Storage Temperature Range  
Junction Temperature  
PD  
Tstg  
Tj  
150  
-55 to +150  
150  
mW  
к
K
DIMENSIONS  
MM  
к
INCHES  
MIN  
Electrical Characteristics @ 25к Unless Otherwise Specified  
Parameter  
DIM  
A
B
C
D
E
MAX  
.120  
.104  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
NOTE  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
Symbol Min. Typ. Max. Unit  
Minimum Reverse  
Breakdown Voltage  
(IR=100µA)  
V(BR)  
80  
---  
---  
V
V
F
G
H
J
.100  
1.12  
.180  
.51  
Maximum Forward Voltage  
(IF = 1mA)  
(IF = 10mA)  
---  
---  
---  
0.61  
0.74  
0.92  
---  
---  
1.2  
VF  
.085  
.37  
K
(IF = 100mA)  
Suggested Solder  
Pad Layout  
.031  
.800  
Maximum Reverse Voltage  
Leakage Current  
(VR=30V)  
---  
---  
---  
---  
0.1  
0.5  
IR  
µA  
(VR=80V)  
Capacitance between  
Teminals*  
CT  
---  
---  
2.2  
4.0  
pF  
ns  
.035  
.900  
Maximum Reverse Recovery  
Time  
(IF = IR=10mA, Irr=0.1hIR)  
.079  
2.000  
inches  
mm  
trr  
1.6  
4.0  
* Measured at f=1.0MHz, VR=0  
.037  
.950  
.037  
.950  
www.mccsemi.com  
Revision: A  
2015/04/08  
1 of 3  

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