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1SS184-TP PDF预览

1SS184-TP

更新时间: 2024-02-05 01:13:07
品牌 Logo 应用领域
美微科 - MCC 整流二极管开关
页数 文件大小 规格书
3页 198K
描述
Rectifier Diode, 2 Element, 0.1A, Silicon, LEAD FREE, PLASTIC PACKAGE-3

1SS184-TP 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.65配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G3湿度敏感等级:1
元件数量:2端子数量:3
最高工作温度:125 °C最大输出电流:0.05 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.15 W最大重复峰值反向电压:80 V
最大反向恢复时间:0.004 µs表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

1SS184-TP 数据手册

 浏览型号1SS184-TP的Datasheet PDF文件第2页浏览型号1SS184-TP的Datasheet PDF文件第3页 
M C C  
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20736 Marilla Street Chatsworth  
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TM  
1SS184  
Micro Commercial Components  
Features  
xꢀ Low Forward Voltage  
xꢀ Low Leakage Current  
150mW High Speed  
Switching Diodes  
80 Volt  
xꢀ Surface Mount SOT-23 Package  
·
·
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
Pin Configuration Top View  
SOT-23  
A
D
B 3  
B
C
Maximum Ratings  
Parameter  
Symbol  
Rating  
Unit  
F
E
Non-Repetitive Peak Reverse Voltage  
Reverse Voltage  
VRM  
85  
V
VR  
IO  
80  
100  
V
mA  
mA  
mW  
к
Average Rectified Output Current  
Forward Continuous Current  
Power Dissipation @ TA=25к  
H
G
J
IFM  
PD  
Tstg  
Tj  
300  
K
150  
DIMENSIONS  
MM  
Storage Temperature Range  
Junction Temperature  
-55 to +125  
125  
INCHES  
MIN  
к
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
NOTE  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
Electrical Characteristics @ 25к Unless Otherwise Specified  
Parameter  
Symbol Min. Typ. Max. Unit  
F
G
H
J
.100  
1.12  
.180  
.51  
Minimum Reverse  
Breakdown Voltage  
(IR=100µA)  
V(BR)  
80  
---  
---  
V
V
.085  
.37  
K
Maximum Forward Voltage  
(IF = 1mA)  
(IF = 10mA)  
---  
---  
---  
0.60  
0.72  
0.90  
---  
---  
1.2  
Suggested Solder  
Pad Layout  
VF  
(IF = 100mA)  
.031  
.800  
Maximum Reverse Voltage  
Leakage Current  
(VR=30V)  
---  
---  
---  
---  
0.1  
0.5  
IR  
µA  
.035  
.900  
(VR=80V)  
.079  
2.000  
inches  
mm  
Capacitance between  
Teminals*  
CT  
---  
---  
0.9  
1.6  
3.0  
4.0  
pF  
ns  
Maximum Reverse Recovery  
Time  
(IF = IR=10mA, Irr=0.1hIR)  
trr  
.037  
.950  
* Measured at f=1.0MHz, VR=0  
.037  
.950  
www.mccsemi.com  
Revision: A  
2011/01/01  
1 of 3  

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