Datasheet > 1SS187(T5LTST,F)

1SS187(T5LTST,F)

更新时间： 2024-02-16 14:49:58

品牌	Logo	应用领域
东芝 - TOSHIBA		快速恢复二极管测试光电二极管
页数	文件大小	规格书
3页	193K
描述
0.1A, 85V, SILICON, SIGNAL DIODE

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

1SS187(T5LTST,F) 技术参数

生命周期：	Active	包装说明：	R-PDSO-G3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.70	风险等级：	5.65
应用：	FAST RECOVERY	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1.2 V	JESD-30 代码：	R-PDSO-G3
最大非重复峰值正向电流：	2 A	元件数量：	1
相数：	1	端子数量：	3
最高工作温度：	125 °C	最大输出电流：	0.1 A
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	最大功率耗散：	0.15 W
参考标准：	AEC-Q101	最大重复峰值反向电压：	85 V
最大反向电流：	0.5 µA	最大反向恢复时间：	0.004 µs
反向测试电压：	80 V	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
Base Number Matches：	1

1SS187(T5LTST,F) 数据手册

1SS187

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS187

Unit: mm

Ultra High Speed Switching Application

z Small package

: SC-59

: V

z Low forward voltage

= 0.92V (typ.)

F (3)

z Fast reverse recovery time: t = 1.6ns (typ.)

z Small total capacitance

: C = 2.2pF (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10ms)

300

100

FSM

Power dissipation

150

°C

JEDEC

Junction temperature

125

JEITA

SC-59

Storage temperature range

−55 to 125

stg

1-3G1D

TOSHIBA

Weight: 0.012g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics

Test

Circuit

Characteristic

Symbol

Test Condition

Min

Typ

Max

Unit

―

=1mA

―

0.61

0.74

0.92

―

F (1)

F (2)

F (3)

R (1)

R (2)

Forward voltage

= 10mA

= 100mA

1.20

0.1

0.5

4.0

= 30V

Reverse current

μA

= 80V

―

Total capacitance

= 0, f = 1MHz

2.2

1.6

Reverse recovery tme

I = 10mA (Fig.1)

Marking

Start of commercial production

1982-06

2014-03-01

12 3

下载PDF

与1SS187(T5LTST,F)相关器件

型号	品牌	描述	获取价格	数据表
1SS187,LF	TOSHIBA	Switching Diodes	获取价格
1SS187_07	TOSHIBA	Ultra High Speed Switching Application	获取价格
1SS187-T	RECTRON	Rectifier Diode,	获取价格
1SS187T5LT	TOSHIBA	Ultra High Speed Switching Application	获取价格
1SS187TE85L	TOSHIBA	Ultra High Speed Switching Application	获取价格
1SS187TE85L2	TOSHIBA	DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode	获取价格