Datasheet > 1SS176

1SS176

更新时间： 2024-11-16 14:54:39

品牌	Logo	应用领域
EIC		/
页数	文件大小	规格书
2页	72K
描述
Switching Diodes

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中文翻译

获取价格

技术参数
数据手册

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1SS176 技术参数

是否无铅：	不含铅	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.76
Is Samacsys：	N	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

1SS176 数据手册

www.eicsemi.com

HIGH SPEED SWITCHING DIODE

1SS176

DO - 34 Glass

FEATURES :

• High switching speed: max. 4 ns

• Continuous reverse voltage:max. 30 V

• Repetitive peak reverse voltage:max. 35 V

• Pb / RoHS Free

1.00 (25.4)

0.078 (2.0 )max.

min.

0.118 (3.0)

Cathode

max.

Mark

1.00 (25.4)

min.

0.017 (0.43)max.

MECHANICAL DATA :

Case: DO-34 Glass Case

Weight: approx. 0.093g

Dimensions in inches and ( millimeters )

Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)

Parameter

Symbol

V_RRM

V_RM

I_F

Value

Unit

Maximum Repetitive Peak Reverse Voltage

Maximum Continuous Reverse Voltage

Maximum Average Forward Current

Maximum Peak Forward Current

Maximum Power Dissipation

100

°C

I_FM

300

P_D

300

I_FSM

T_J

Maximum Non-repetitive Peak Forward Current

Maximum Junction Temperature

Storage Temperature Range

1000

175

T_S

-65 to + 175

°C

Electrical Characteristics (Ta = 25°C unless otherwise noted)

Test Condition

V_R= 35 V

I_F= 100 mA

Min.

Typ.

Max.

Unit

Parameter

Symbol

I_R

Reverse Current

0.5

1.2

3.0

μA

V_F

C_T

Forward Voltage

f = 1MHz ; V_R= 0.5 V

Capacitance between terminals

I_F= 10 mA , V_R= 6 V

Reverse Recovery Time

Trr

4.0

R_L= 50 Ω

Page 1 of 2

Rev. 03 : December 3, 2008

中文翻译

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