Datasheet > 1SS176

1SS176

更新时间： 2024-11-15 07:23:47

品牌	Logo	应用领域
商升特 - SEMTECH		二极管局域网
页数	文件大小	规格书
1页	115K
描述
SILICON EPITAXIAL PLANAR DIODE

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中文翻译

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数据手册

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1SS176 数据手册

1SS176

SILICON EPITAXIAL PLANAR DIODE

Switching diode

Max. 0.45

Min. 27.5

Max. 2.9

Min. 27.5

Max. 1.9

Black

Cathode Band

Black

Part No.

XXX

Glass Case DO-34

Dimensions in mm

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

V_R

Value

Unit

Reverse Voltage

Peak Reverse Voltage

V_RM

I_O

Average Rectified Output Current

Forward Voltage

100

I_F

300

Surge Forward Current at t = 1s

Junction Temperature

I_FSM

T_j

175

Storage Temperature Range

T_S

- 65 to + 175

Characteristics at T_a= 25 C

Parameter

Symbol

V_F

Max.

1.2

Unit

Forward Voltage

at I_F= 100 mA

Reverse Current

at V_R= 30 V

I_R

C_tot

t_rr

0.5

µA

Capacitance

at V_R= 0 V, f = 1 MHz

Reverse Recovery Time

from I_F= 100 mA, V_R= 6 V, R_L= 100 Ω

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 23/06/2007

中文翻译

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