Datasheet > 1SS171

1SS171

更新时间： 2024-11-15 07:23:47

品牌	Logo	应用领域
商升特 - SEMTECH		二极管局域网
页数	文件大小	规格书
2页	175K
描述
SILICON EPITAXIAL PLANAR DIODE

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1SS171 数据手册

1SS171

SILICON EPITAXIAL PLANAR DIODE

for high speed switching circuits

Max. 0.5

Min. 27.5

Max. 3.9

Min. 27.5

Features

Max. 1.9

• High switching speed

• Small terminal capacitance

• Large forward current

Black

Cathode Band

Black

Part No.

Black

"ST" Brand

XXX

Glass Case DO-35

Dimensions in mm

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Repetitive Peak Reverse Voltage

Reverse Voltage

Symbol

V_RRM

V_R

Value

Unit

Average Forward Current

I_F(AV)

I_FRM

I_FSM

T_J

200

600

Repetitive Peak Forward Current

Non-Repetitive Peak Forward Surge Current (at t = 1 s)

Junction Temperature

175

Storage Temperature Range

T_stg

- 65 to + 175

Electrical Characteristics at T_a= 25 C

Parameter

Symbol

V_F

Max.

1.1

Unit

Forward Voltage

at I_F= 200 mA

Reverse Current

at V_R= 15 V

I_R

at V_R= 75 V

500

Terminal Capacitance

at V_R= 0 V, f = 1 MHz

C_T

t_rr

Reverse Recovery Time

at I_F= 10 mA, I_rr= 0.1 I_R, R_L= 100 Ω

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 20/06/2007

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