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1N914/F2 PDF预览

1N914/F2

更新时间: 2024-11-20 20:56:51
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
1页 31K
描述
Rectifier Diode, 1 Element, 0.075A, 100V V(RRM), Silicon, DO-204AH, GLASS, DO-35, 2 PIN

1N914/F2 技术参数

是否无铅: 不含铅是否Rohs认证: 不符合
生命周期:Transferred零件包装代码:DO-35
包装说明:O-LALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.48
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJEDEC-95代码:DO-204AH
JESD-30 代码:O-LALF-W2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:200 °C最大输出电流:0.075 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM最大功率耗散:0.5 W
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向恢复时间:0.004 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

1N914/F2 数据手册

  
1N914  
Vishay Semiconductors  
formerly General Semiconductor  
Small-Signal Diode  
DO-204AH (DO-35 Glass)  
Features  
• Silicon Epitaxial Planar Diode  
• For general purpose and switching  
Mechanical Data  
Case: DO-35 Glass Case  
Weight: approx. 0.13g  
Packaging Codes/Options:  
F2/10K per Ammo tape (52mm tape), 50K/box  
F3/10K per 13reel (52mm tape), 50K/box  
Dimensions in inches and (millimeters)  
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
VRM  
IF(AV)  
Ptot  
Limit  
100  
75  
Unit  
V
Peak Reverse Voltage  
Average Rectified Current  
Power Dissipation at Tamb = 25°C  
Junction Temperature  
mA  
mW  
°C  
500  
200  
Tj  
Electrical Characteristics(TJ = 25°C unless otherwise noted)  
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Forward Voltage Drop  
VF  
IF = 10mA  
1.0  
V
VR = 20V  
VR = 75V  
25  
5.0  
nA  
µA  
Reverse Current  
IR  
IF = IR = 10mA, VR = 6V  
RL = 100, to Irr = 1mA  
Reverse Recovery Time  
Capacitance  
trr  
4.0  
4.0  
ns  
Ctot  
VR = 0, f = 1.0MHz  
pF  
Document Number 88112  
13-May-02  
www.vishay.com  
1

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