Datasheet > 1N914_B0_100A1

1N914_B0_100A1

更新时间： 2024-09-24 01:05:55

品牌	Logo	应用领域
强茂 - PANJIT		开关
页数	文件大小	规格书
4页	82K
描述
SWITCHING DIODES

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N914_B0_100A1 数据手册

1N914

SWITCHING DIODES

VOLTAGE

100 Volt

POWER

500 mWatt

FEATURES

• Fast switching Speed.

• Electrically ldentical to Standerd JEDEC

• High Conductance

• Axial lead Package ldeally Suited for Automatic lnsertion.

• Lead free in compliance with EU RoHS 2011/65/EU directive

MECHANICAL DATA

• Case: Molded Glass DO-35

• Terminals: Solderable per MIL-STD-750, Method 2026

• Approx. Weight: 0.00465 ounces, 0.131 grams

• Packing information

- 2K per Bulk box

T/R - 10K per 15" plastic Reel

T/B - 5K per horiz. tape & Ammo box

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise noted)

PARAMETER

Reverse Voltage

SYMBOL

V_R

1N914

UNITS

Peak Reverse Voltage

V_RM

100

RMS Voltage

V_RMS

I_F(AV)

I_FSM

Maximum Average Forward Current at T_A=25^OC And f > 50Hz

Surge Forward Current at t < 1s and T_J=25 ^OC

Power Dissipation at Tamb= 25 ^OC

Maximum Forward Voltage at I_F=10mA

500

1.0

P_TOT

V_F

Maximum Leakage Current

at V_R=20V

μA

I_R

at V_R=75V

at V_R=20V ,T

= 150 ^O

Maximum Capacitance (Note 1)

C_J

t_rr

Maximum Reverse Recovery Time (Note 2)

Typical Thermal Resistance

R_θJA

350

^OC / W

^OC

Junction Temperature and Storage Temperature Range

T_J,T_s

-65 to +175

NOTE:

1. CJ at V^R=0, f=1MHZ

2. From IF=10mA to IR=1mA, VR=6Volts, RL=100

February 21,2014-REV.04

PAGE . 1

12 3 4

中文翻译

下载PDF

与1N914_B0_100A1相关器件

型号	品牌	获取价格	描述	数据表
1N914_NL	FAIRCHILD	获取价格	暂无描述
1N914_R2_100A1	PANJIT	获取价格	SWITCHING DIODES
1N914_T50A	FAIRCHILD	获取价格	High Conductance Fast Diode, AXIAL LEADED; GLASS; JEDEC DO204 ; VARIATION AH, 5000/AMMO
1N914-1	MICROSEMI	获取价格	PERFORMANCE SPECIFICATION
1N914-1	NJSEMI	获取价格	Diode Switching 75V 0.075A 2-Pin DO-35
1N914116	NXP	获取价格	DIODE 0.075 A, 100 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode
1N914-13	DIODES	获取价格	Rectifier Diode, 1 Element, 0.075A, 75V V(RRM), Silicon, DO-35
1N914136	NXP	获取价格	DIODE 0.075 A, 100 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode
1N914153	NXP	获取价格	DIODE 0.075 A, 100 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode
1N914-1A	MICROSEMI	获取价格	Diode,