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1N914A PDF预览

1N914A

更新时间: 2024-09-24 11:45:27
品牌 Logo 应用领域
FRONTIER 二极管局域网
页数 文件大小 规格书
2页 122K
描述
SILICON EPITAXIAL PLANAR DIODE

1N914A 技术参数

生命周期:Contact Manufacturer包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.21外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:O-PALF-W2元件数量:1
端子数量:2最高工作温度:200 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
最大功率耗散:0.25 W认证状态:Not Qualified
最大反向电流:5 µA最大反向恢复时间:0.004 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

1N914A 数据手册

 浏览型号1N914A的Datasheet PDF文件第2页 
Frontier Electronics Corp.  
667 E. COCHRAN STREET, SIMI VALLEY, CA 93065  
TEL: (805) 522-9998 FAX: (805) 522-9989  
E-mail: frontiersales@frontierusa.com  
Web: http://www.frontierusa.com  
SILICON EPITAXIAL PLANAR DIODE  
1N914 1N914A 1N914B  
FEATURES  
z FAST SWITCHING  
z SMALL BODY  
0.52  
1.9 ∅  
3.9∅  
MECHANICAL DATA  
z CASE GLASS, DO35, DIMENSIONS IN INCHES AND (MILLIMETERS)  
z LEADS SOLDERABLE PER MIL-STD-202, METHOD 208  
z POLARITY CATHODE INDICATED BY COLOR BAND  
z WEIGHT 0.13 GRAMS  
27.5  
MIN  
RATINGS  
SYMBOL  
1N914  
1N914A  
1N914B  
UNITS  
REVERSE VOLTAGE  
VR  
75  
V
V
PEAK REVERSE VOLTAGE  
VRM  
100  
RECTIFIED CURRENT (AVERAGE)  
HALF WAVE RECTIFICATION WITH RESIST LOAD  
AT Tamb=25 ºC AND 50Hz.  
IO  
75  
mA  
SURGE FORWARD CURRENT AT T < 1 s AND TJ=25 ºC  
POWER DISSIPATION AT Tamb=25 ºC  
JUNCTION TEMPERATURE  
IFSM  
PTOT  
TJ  
500  
500  
mA  
mW  
ºC  
200  
STORAGE TEMPERATURE RANGE  
TS  
- 55 TO + 200  
ºC  
ELECTRICAL CHARACTERISTICS (AT TA =25°C UNLESS OTHERWISE NOTED)  
CHARACTERISTICS  
FORWARD VOLTAGE AT IF=10mA ( 1N914 )  
FORWARD VOLTAGE AT IF=20mA ( 1N914A )  
FORWARD VOLTAGE AT IF=100mA ( 1N914B )  
LEAKAGE CURRENT  
SYMBOL  
MIN  
-
TYP  
-
MAX  
1
UNITS  
V
VF  
AT VR=20V  
AT VR=75V  
AT VR=20V TJ=150 ºC  
IR  
IR  
IR  
-
-
-
-
-
-
25  
5
50  
nA  
μA  
μA  
REVERSE BREAKDOWN VOLTAGE  
TESTED WITH 100μA PULSES  
CAPACITANCE AT VF=VR=0  
VR  
100  
-
-
-
-
V
CTOT  
4
PF  
VOLTAGE RISE WHEN SWITCHING ON  
TESTED WITH 50mA FORWARD PULSES  
VFR  
-
-
2.5  
V
TP=0.1μS RISE TIME30ns FP=50 TO 100 KHZ  
REVERSE RECOVERY TIME  
FROM IF=10mA TO IR=1mA VR=6V RL=100Ω  
THERMAL RESISTANCE  
FUNCTION TO AMBLENT AIR  
RECTIFICATION EFFICIENCY  
AT F=100 MHZ VRF=2V  
TRR  
RTHA  
NV  
-
-
-
-
-
4
0.35  
-
nS  
K / mW  
-
0.45  
1N914 1N914A 1N914B  
Page: 1  

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