Datasheet > 1N914A

1N914A

更新时间： 2024-09-24 03:54:55

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管开关
页数	文件大小	规格书
4页	175K
描述
Switching Diode

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中文翻译

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数据手册

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1N914A 数据手册

Switching Diode

1N914/1N914A/1N914B

Switching Diode

Features

• Fast switching speed

• Electrically indentical to standard JEDEC

• High Conductance

DO-35

• Axial lead package ideally suited for automatic insertion

Mechanical Data

• Case: Molded Glass DO-35

• Terminals: Solderable per MIL-STD-202E, Method 208

• Polarity: Color band denotes cathode

• Mounting position: Any

• Approx. Weight: approx. 0.13 gram

Maximum Ratings and Electrical Characteristics TA=25°C unless otherwise specified

Symbol

Parameters

Reverse Voltage

Peak Reverse Voltage

RMS Voltage

1N914

1N914A

1N914B

Unit

Condition

100

RMS

Maximum Average

Forward Current

150

500

at f ≥ 50Hz

Surge Forward Current

Power Dissipation

at tp< 1s

FSM

500

TOT

---

0.62 @ 5mA

0.72 @ 5mA

1.0 @ 100mA

Min

Maximum

Forward

Voltage

Volts

1.0 @

10mA

1.0 @

20mA

Max

at V = 20V

Maximum Leakage

Current

at V = 75V

5.0

Maximum Capacitance

(Note 1)

°C

VR=0, f=1MHz

IF=10mA to I

Maximum Reverse

Recovery Time

=1mA, V =6V,

R =100Ω

Junction and Storage

Temperature Range

T , T

-65 to +175

°C

STG

Rev. B/NX 2007-08-31

Page 1 of 4

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Tel: (800)-247-2232 (800)-TAITRON

Fax: (800)-TAITFAX (800)-824-8329

(661)-257-6060

(661)-257-6415

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中文翻译

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与1N914A相关器件

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1N914A.T26A	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35
1N914A.T26R	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35
1N914A.T50A	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35
1N914A.T50R	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35
1N914A.TR	TI	获取价格	0.2A, 100V, SILICON, SIGNAL DIODE, DO-35
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1N914AF	NJSEMI	获取价格	Diode Switching 100V 0.2A 2-Pin DO-35