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1N914A PDF预览

1N914A

更新时间: 2024-11-12 12:51:19
品牌 Logo 应用领域
鲁光 - LGE 小信号开关二极管
页数 文件大小 规格书
3页 210K
描述
Small Signal Switching Diodes

1N914A 数据手册

 浏览型号1N914A的Datasheet PDF文件第2页浏览型号1N914A的Datasheet PDF文件第3页 
1N914/1N914A/1N914B  
Small Signal Switching Diodes  
REVERSE VOLTAGE: 75 V  
CURRENT75 mA  
DO - 35  
Features  
Glass sealed envelope. (MSD)  
RM=100V guaranteed  
High reliability  
V
Mechanical Data  
Case: DO-35, glass case  
Polarity: Color band denotes cathode  
Weight: 0.004 ounces, 0.13 grams  
Dimensions in millimeters  
Rating at 25oC ambient temperature unless otherwise specified.  
Maximum Ratings  
UNITS  
1N914,1N914A,1N914B  
VR  
VRM  
75  
100  
Maximum DC reverse voltage  
Maximum recurrent peak reverse voltage  
V
V
Average forward rectified current  
IO  
75  
mA  
half wave rectification with resistive load  
Forward surge current t<1ms  
t=1ms  
4.0  
IFSM  
1.0  
0.5  
A
t=1s  
Ptot  
T
TSTG  
250  
175  
- 65 --- + 175  
Power dissipation (note)  
Junction temperature  
Storage temperature range  
mW  
Note:Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.  
o
Electrical CharacteristicsRating at 25 C ambient temperature unless otherwise specified.  
Min  
Typ  
Max  
UNITS  
V
Forw ard voltage @1N914,1N914A,IF=10mA  
1N914B,IF=5mA  
-
-
-
-
-
-
-
-
1.0  
0.72  
1.0  
25  
5
50  
4
VF  
0.62  
1N914B,IF=100mA  
-
-
-
-
-
Leakage current @VR=20V  
@VR=75V  
n A  
µA  
µA  
pF  
IR  
@VR=20V,Tj=150  
Capacitance  
Reverse recovery time @IF=10mA,IR=10mA,  
@ VR=0V,f=1MHZ  
Ctot  
t
-
-
8
ns  
rr  
RL=100,measured at IR=1mA  
Voltage rise w hen sw itching on  
tested w ith 50mA pulses tr=20ns  
Vfr  
-
-
-
-
2.5  
V
RθjA  
500  
Thermal resistance junction to ambient (note )  
Note:Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.  
/W  
http://www.luguang.cn  
mail:lge@luguang.cn  

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