生命周期: | Transferred | Reach Compliance Code: | unknown |
风险等级: | 5.68 | 其他特性: | METALLURGICALLY BONDED |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JEDEC-95代码: | DO-35 | JESD-30 代码: | O-XALF-W2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 125 °C |
最低工作温度: | -65 °C | 最大输出电流: | 0.2 A |
封装主体材料: | UNSPECIFIED | 封装形状: | ROUND |
封装形式: | LONG FORM | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 40 V | 表面贴装: | NO |
技术: | SCHOTTKY | 端子面层: | TIN LEAD |
端子形式: | WIRE | 端子位置: | AXIAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N6677-1 | CDI-DIODE |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 0.2A, 40V V(RRM), Silicon, DO-35, HERMETIC SEALED PA | |
1N6677-1E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 0.2A, 40V V(RRM), Silicon, DO-204AH, ROHS COMPLIANT, | |
1N6677E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 0.2A, 40V V(RRM), Silicon, DO-35, HERMETIC SEALED, D | |
1N6677UR-1 | MICROSEMI |
获取价格 |
0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIERS | |
1N6677UR-1E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 0.2A, 40V V(RRM), Silicon, DO-213AA, MELF-2 | |
1N6686 | SSDI |
获取价格 |
20 AMPS 100 - 200 VOLTS 40 nsec HYPER FAST RECTIFIER | |
1N6686_1 | SSDI |
获取价格 |
HYPER FAST RECTIFIER | |
1N6686US | SSDI |
获取价格 |
20 AMPS 100 - 200 VOLTS 40 nsec HYPER FAST RECTIFIER | |
1N6687 | SSDI |
获取价格 |
20 AMPS 100 - 200 VOLTS 40 nsec HYPER FAST RECTIFIER | |
1N6687US | SSDI |
获取价格 |
20 AMPS 100 - 200 VOLTS 40 nsec HYPER FAST RECTIFIER |