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1N6677E3 PDF预览

1N6677E3

更新时间: 2024-11-09 14:46:07
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
2页 46K
描述
Rectifier Diode, Schottky, 1 Element, 0.2A, 40V V(RRM), Silicon, DO-35, HERMETIC SEALED, DO-35, 2 PIN

1N6677E3 技术参数

生命周期:Active包装说明:O-LALF-W2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.68
其他特性:METALLURGICALLY BONDED外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-35
JESD-30 代码:O-LALF-W2元件数量:1
端子数量:2最大输出电流:0.2 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM最大重复峰值反向电压:40 V
表面贴装:NO技术:SCHOTTKY
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

1N6677E3 数据手册

 浏览型号1N6677E3的Datasheet PDF文件第2页 
1N6675 thru 1N6677  
and  
• 1N6677-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS  
PER MIL-PRF-19500/610  
• 0.2 AND 0.5 AMP SCHOTTKY BARRIER RECTIFIERS  
• HERMETICALLY SEALED  
DSB0.2A20 thru DSB0.2A40  
and  
• METALLURGICALLY BONDED  
DSB0.5A20 thru DSB0.5A40  
• DOUBLE PLUG CONSTRUCTION  
MAXIMUM RATINGS - 0.2 AMP DEVICES  
Operating Temperature: -65°C to +125°C  
Storage Temperature: -65°C to +150°C  
Average Rectified Forward Current: 0.2 AMP @T = +100°C, =3/8”  
0.055 / 0.090  
1.40 / 12.29  
L
Derating: 8.0 mA / °C above T = +100°C, L = 3/8”  
L
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.  
MAXIMUM  
CDI  
TYPE  
NUMBER  
WORKING PEAK  
REVERSE  
VOLTAGE  
MAXIMUM REVERSE  
LEAKAGE CURRENT  
AT RATED VOLTAGE  
CAPACITANCE @  
0.120 / 0.200  
3.05 / 5.08  
MAXIMUM FORWARD VOLTAGE  
V
= 0 VOLTS  
R
f =1.0 MHz  
V
RWM  
V
@ 20 mA  
V
@ 200 mA  
V
@ 630 mA  
I
@ +25°C  
I @ +100°C  
R
C
T
F
F
F
R
VOLTS  
20  
VOLTS  
0.37  
VOLTS  
0.50  
VOLTS  
0.70  
µ A  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
mA  
0.6  
0.6  
0.6  
0.6  
0.6  
0.6  
PICO FARADS  
1N6675  
1N6676  
50  
50  
50  
50  
50  
50  
1.000  
25.400  
30  
0.37  
0.50  
0.70  
0.018 / 0.022  
0.457 / 0.559  
1N6677  
40  
0.37  
0.50  
0.70  
DSB0.2A20  
DSB0.2A30  
DSB0.2A40  
20  
0.37  
0.50  
0.70  
30  
0.37  
0.50  
0.70  
40  
0.37  
0.50  
0.70  
FIGURE 1  
MAXIMUM RATINGS - 0.5 AMP DEVICES  
Operating Temperature: -65°C to +125°C  
Storage Temperature: -65°C to +150°C  
Average Rectified Forward Current: 0.5 AMP @ +75°C  
Derating: 6.67 mA / °C above +75°C  
DESIGN DATA  
CASE: Hermetically sealed, DO-35  
LEAD MATERIAL: Copper clad steel  
LEAD FINISH: Tin / Lead  
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.  
MAXIMUM  
CAPACITANCE @  
= 0 VOLTS  
CDI  
TYPE  
NUMBER  
WORKING PEAK  
REVERSE  
VOLTAGE  
MAXIMUM  
FORWARD VOLTAGE  
MAXIMUM REVERSE  
LEAKAGE CURRENT  
AT RATED VOLTAGE  
V
R
THERMAL RESISTANCE: (R  
):  
OJEC  
f =1.0 MHz  
250 °C/W maximum at L = .375 inch  
V
RWM  
V
@ 0.1A  
V
@ 0.5A  
I
@ +25°C  
I @ +100°C  
R
C
T
F
F
R
THERMAL IMPEDANCE: (Z  
°C/W maximum  
): 20  
OJX  
VOLTS  
20  
VOLTS  
0.50  
VOLTS  
0.65  
µ A  
10.0  
10.0  
10.0  
mA  
1.0  
1.0  
1.0  
PICO FARADS  
DSB0.5A20  
DSB0.5A30  
DSB0.5A40  
60  
60  
60  
30  
0.50  
0.65  
POLARITY: Cathode end is banded.  
MOUNTING POSITION: Any  
40  
0.50  
0.65  
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841  
PHONE (978) 620-2600  
FAX (978) 689-0803  
WEBSITE: http://www.microsemi.com  
79  

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