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1N6625 PDF预览

1N6625

更新时间: 2024-11-18 07:23:11
品牌 Logo 应用领域
商升特 - SEMTECH 整流二极管局域网
页数 文件大小 规格书
3页 34K
描述
Axial Leaded Hermetically Sealed Ultra Fast Recovery Rectifier Diode

1N6625 技术参数

生命周期:Active包装说明:HERMETIC SEALED PACKAGE-2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.23Is Samacsys:N
其他特性:LOW LEAKAGE CURRENT应用:ULTRA FAST RECOVERY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.95 VJESD-30 代码:O-XALF-W2
最大非重复峰值正向电流:15 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最大输出电流:1.5 A
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
最大重复峰值反向电压:1000 V最大反向恢复时间:0.06 µs
子类别:Rectifier Diodes表面贴装:NO
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

1N6625 数据手册

 浏览型号1N6625的Datasheet PDF文件第2页浏览型号1N6625的Datasheet PDF文件第3页 
1N6620 THRU 1N6625  
Axial Leaded Hermetically Sealed  
Ultra Fast Recovery Rectifier Diode  
POWER DISCRETES  
Description  
Features  
Quick reference data  
u Low reverse leakage current  
u Hermetically sealed in fused metal oxide  
u Good thermal shock resistance  
u Low forward voltage drop  
VR = 200 - 1000V  
IF = 1.5 - 2.0 A  
trr = 30 - 60ns  
VF = 1.6 -1.95V  
u Avalanche capability  
Absolute Maximum Ratings  
Electrical specifications @ TA = 25°C unless otherwise specified.  
Symbol  
1N6620  
1N6621  
1N6622  
1N6623  
1N6624 1N6625  
Units  
Working Reverse Voltage  
VRWM  
200  
400  
600  
800  
900  
1.5  
1000  
1.5  
V
Average Forward Current  
@ 55°C in free air, lead length  
0.375"  
IF(AV)  
2.0  
20  
2.0  
20  
2.0  
20  
1.5  
20  
A
Non-Repetitive Surge Current  
(tp = 8.3mS @ VR & TJMAX  
)
IFSM  
20  
15  
A
(tp = 8.3mS, @ VR & 25°C)  
Storage Temperature Range  
TSTG  
-65 to +175  
°C  
Revision: November, 2009  
1
www.semtech.com  

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