Datasheet > 1N6626_09

1N6626_09

更新时间： 2024-01-06 15:18:49

品牌	Logo	应用领域
美高森美 - MICROSEMI		整流二极管超快恢复二极管快速恢复二极管
页数	文件大小	规格书
4页	240K
描述
VOIDLESS-HERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N6626_09 数据手册

1N6626 thru 1N6631

VOIDLESS-HERMETICALLY-SEALED

ULTRA FAST RECOVERY GLASS

RECTIFIERS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-

19500/590 and is ideal for high-reliability applications where a failure cannot be

tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working

peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-

glass construction using an internal “Category I” metallurgical bond. These devices

are also available in surface mount MELF package configurations by adding a “US”

suffix (see separate data sheet for 1N6626US thru 1N6631US). Microsemi also

offers numerous other rectifier products to meet higher and lower current ratings

with various recovery time speed requirements including standard, fast and ultrafast

device types in both through-hole and surface mount packages.

“E” Package

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Popular JEDEC registered 1N6626 to 1N6631 series

Voidless hermetically sealed glass package

Extremely robust construction

•

Ultrafast recovery rectifier series 200 to 1000 V

Military and other high-reliability applications

Switching power supplies or other applications

requiring extremely fast switching & low forward

loss

High forward surge current capability

Low thermal resistance

Triple-layer passivation

Internal “Category I” Metallurgical bonds

•

JAN, JANTX, and JANTXV available per MIL-PRF-

19500/590

Controlled avalanche with peak reverse power

capability

•

Further options for screening in accordance with MIL-

PRF-19500 for JANS by using a “SP” prefix, e.g. SP6626,

SP6629, etc.

•

Inherently radiation hard as described in Microsemi

MicroNote 050

Surface mount equivalents also available in a square end-

cap MELF configuration with “US” suffix (see separate

data sheet for 1N6626US thru 1N6631US)

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Junction Temperature: -65^oC to +150^oC

Storage Temperature: -65^oC to +175^oC

•

CASE: Hermetically sealed voidless hard glass

with Tungsten slugs

Peak Forward Surge Current @ 25^oC: 75A (except

1N6631 which is 60A)

TERMINATIONS: Axial-leads are Tin/Lead

(Sn/Pb) over Copper.

•

MARKING: Body painted and part number, etc.

POLARITY: Cathode indicated by band

Tape & Reel option: Standard per EIA-296

Weight: 750 mg

Note: Test pulse = 8.3ms, half-sine wave.

•

Average Rectified Forward Current (I_O) at T_L= +75^oC

(L=.375 inch from body):

1N6626 thru 1N6628

1N6629 thru 1N6631

2.3 A

1.8 A

See package dimensions on last page

(Derate I_Olinearly at 1.0%/^oC for T_L> +75^oC)

•

Average Rectified Forward Current (I_O) at T_A=25^oC:

1N6626 thru 1N6628

1N6629 thru 1N6631

1.75 A

1.40 A

(Derate I_Olinearly at 0.80%/ ^oC for T_A>+25^oC. This I_O

rating is typical for PC boards where thermal resistance

from mounting point to ambient is sufficiently controlled

where T_J(max)is not exceeded. See MIL-PRF-19500/590)

•

Thermal Resistance L= 0.375 inch (R_θ_JL): 22^oC/W

Capacitance at V_R= 10 V: 40 pF

Solder temperature: 260^oC for 10 s (maximum)

10-01-2009 REV F; SA7-57.pdf

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

中文翻译

下载PDF

与1N6626_09相关器件

型号	品牌	获取价格	描述	数据表
1N6626D3A	SEME-LAB	获取价格	ULTRA FAST RECOVERY POWER RECTIFIER
1N6626D3B	SEME-LAB	获取价格	ULTRA FAST RECOVERY POWER RECTIFIER
1N6626D3D	TTELEC	获取价格	Diode
1N6626-PBF	DIGITRON	获取价格	Rectifier Diode
1N6626S	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, Silicon,
1N6626SMS	SSDI	获取价格	2.3 A, 200 V Hyperfast Recovery Rectifier
1N6626SMSTX	SSDI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2.3A, 200V V(RRM), Silicon,
1N6626SMSTXV	SSDI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2.3A, 200V V(RRM), Silicon,
1N6626U	SENSITRON	获取价格	HERMETIC SURFACE MOUNT ULTRAFAST RECTIFIER (MELF)
1N6626US	SENSITRON	获取价格	Ultrafast Recovery Rectifier

与1N6626_09相关文章

LTM4644/LTM4644-1：创新的四输出同步降压微模块调节器
2024-07-02

2
2N3500：一款多用途NPN硅晶体管的全面解析
2024-07-02

4
最详细资料解析：BA5917AFP参数说明、引脚说明
2024-07-02

5
MAX232IDR数据手册：产品特性、电气参数、替代型号推荐
2024-07-02

3

产品中心

服务支持

精选活动

关于我们

帮助中心

1N6626_09

1N6626_09 数据手册

与1N6626_09相关器件

与1N6626_09相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N6626_09

1N6626_09 数据手册

与1N6626_09相关器件

与1N6626_09相关文章

您还可以找

您在本页遇到什么问题？