Datasheet > 1N6361TRE3

1N6361TRE3

更新时间： 2024-11-30 15:43:07

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管
页数	文件大小	规格书
3页	165K
描述
Trans Voltage Suppressor Diode, 18V V(RWM), Unidirectional,

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1N6361TRE3 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.68
击穿电压标称值：	21.2 V	最大钳位电压：	25.2 V
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	极性：	UNIDIRECTIONAL
最大重复峰值反向电压：	18 V	子类别：	Transient Suppressors
表面贴装：	NO	Base Number Matches：	1

1N6361TRE3 数据手册

1N6356 thru 1N6372, e3

or MPT-5 thru MPT-45C, e3

1500 W LOW CLAMPING FACTOR

TRANSIENT VOLTAGE SUPPRESSOR

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This Transient Voltage Suppressor (TVS) series for 1N6356 thru 1N6372 are

JEDEC registered selections for both unidirectional and bidirectional devices.

The 1N6356 thru 1N6364 are unidirectional and the 1N6365 thru 1N6372 are

bi-directional where they all provide a very low specified clamping factor for

minimal clamping voltages (V_C) above their respective breakdown voltages

(V_BR) as specified herein. They are most often used in protecting sensitive

components from inductive switching transients or induced secondary

lightning effects as found in lower surge levels of IEC61000-4-5 . They are

also very successful in protecting airborne avionics and electrical systems.

Since their response time is virtually instantaneous, they can also protect

DO-13

(DO-202AA)

from ESD and EFT per IEC61000-4-2 and IEC61000-4-4.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Unidirectional and bidirectional TVS series for thru-hole

mounting

• Designed to protect Bipolar and MOS Microprocessor

based systems.

•

Suppresses transients up to 1500 watts @ 10/1000 µs

• Protection from switching transients and induced RF

• ESD and EFT protection per IEC 61000-4-2 and -4-4

_clamping(0 volts to V_(BR)min):

Unidirectional – Less than 100 pico seconds.

Bidirectional – Less than 5 nano seconds.

• Secondary lightning protection per IEC61000-4-5 with

42 Ohms source impedance:

•

Working voltage (V_WM) range 5 V to 45 V

Class 1, 2 & 3 1N6356 to 1N6372

Class 4: 1N6356 to 1N6362

Low clamping factor (ratio of actual V_C/V_BR): 1.33 @

full rated power and 1.20 @ 50% rated power

• Secondary lightning protection per IEC61000-4-5 with

•

Hermetic sealed DO-13 metal package

12 Ohms source impedance:

Options for screening in accordance with MIL-PRF-19500

for JAN, JANTX, JANTXV, and JANS are also available

by adding MQ, MX, MV, SP prefixes respectively to part

numbers, e.g. MX1N6356, etc.

Class 1 & 2: 1N6356 to 1N6372

Class 3: 1N6356 to 1N6362

Class 4: 1N6356 to 1N6358

• Secondary lightning protection per IEC61000-4-5 with

•

RoHS Compliant devices available by adding “e3” suffix

2 Ohms source impedance:

Surface mount equivalent packages also available as

SMCJ6356 – SMCJ6372 (consult factory for other

surface mount options)

Class 2: 1N6356 to 1N6361

Class 3: 1N6356 to 1N6358

• Inherently radiation hard per Microsemi MicroNote

•

Plastic axial-leaded equivalents available in the

1N6373 – 1N6389 series (see separate data sheet)

050

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

1500 Watts for 10/1000 μs with repetition rate of 0.01% or

•

CASE: DO-13 (DO-202AA), welded, hermetically

sealed metal and glass

less* at lead temperature (T_L) 25^oC (See Figs. 1, 2, & 4)

•

Operating & Storage Temperatures: -65^oto +175^oC

•

FINISH: All external metal surfaces are Tin-Lead or

RoHS Compliant annealed matte-Tin plating

solderable per MIL-STD-750 method 2026

THERMAL RESISTANCE: 50^oC/W junction to lead at

0.375 inches (10 mm) from body or 110 ^oC/W junction to

ambient when mounted on FR4 PC board with 4 mm²

copper pads (1 oz) and track width 1 mm, length 25 mm

POLARITY: Cathode connected to case and

polarity indicated by diode symbol

DC Power Dissipation*: 1 Watt at T_L< +125^oC 3/8” or 10

mm from body (also see Figure 5)

•

MARKING: Part number and polarity diode symbol

WEIGHT: 1.4 grams. (Approx)

•

Forward surge current: 200 Amps for 8.3ms half-sine

TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

wave at T_A= +25^oC for unidirectional only (1N6356-6364)

Solder Temperatures: 260 ^oC for 10 s (maximum)

•

See package dimension on last page

* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage

(V_WM) except for transients that briefly drive the device into avalanche breakdown (V_BRto V_Cregion).

Microsemi

Page 1

10-03-2007 REV C

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

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与1N6361TRE3相关器件

型号	品牌	获取价格	描述	数据表
1N6362	MICROSEMI	获取价格	TRANSIENT ABSORPTION ZENER
1N6362	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 22V V(RWM), Unidirectional, 1 Element, Silicon, HER
1N6362	PROTEC	获取价格	Trans Voltage Suppressor Diode, 1500W, 22V V(RWM), Unidirectional, 1 Element, Silicon
1N6362	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 1500W, 22V V(RWM), Unidirectional, 1 Element, Silicon, DO-
1N6362C	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 22V V(RWM), Bidirectional,
1N6362CE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 22V V(RWM), Bidirectional,
1N6362CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 22V V(RWM), Bidirectional,
1N6362CTRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 22V V(RWM), Bidirectional,
1N6362E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 22V V(RWM), Unidirectional, 1 Element, Silicon, DO-
1N6362MPT-22	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 22V V(RWM), Unidirectional, 1 Element, Silicon, DO-

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