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1N6363 PDF预览

1N6363

更新时间: 2024-11-08 20:24:47
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
2页 170K
描述
Trans Voltage Suppressor Diode, 1500W, 37V V(RWM), Unidirectional, 1 Element, Silicon, DO-13

1N6363 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:O-MALF-W2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.29Is Samacsys:N
其他特性:LOW IMPEDANCE最小击穿电压:42.4 V
击穿电压标称值:42 V外壳连接:ISOLATED
最大钳位电压:54.3 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-13JESD-30 代码:O-MALF-W2
JESD-609代码:e0最大非重复峰值反向功率耗散:1500 W
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:LONG FORM极性:UNIDIRECTIONAL
最大功率耗散:1 W认证状态:Not Qualified
最大重复峰值反向电压:37 V子类别:Transient Suppressors
表面贴装:NO技术:AVALANCHE
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:AXIALBase Number Matches:1

1N6363 数据手册

 浏览型号1N6363的Datasheet PDF文件第2页 

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