1N5802US thru 1N5806US
SURFACE MOUNT VOIDLESS-
HERMETICALLY-SEALED ULTRA FAST
RECOVERY GLASS RECTIFIERS
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
This “Ultrafast Recovery” surface mount rectifier diode series is military qualified to MIL-
PRF-19500/477 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 2.5 Amp rated rectifiers for working peak reverse
voltages from 50 to 150 volts are hermetically sealed with voidless-glass construction
using an internal “Category I” metallurgical bond. They are also available in axial-
leaded package configurations for thru-hole mounting (see separate data sheet for
1N5802 thru 1N5806). Microsemi also offers numerous other rectifier products to meet
higher and lower current ratings with various recovery time speed requirements
including standard, fast and ultrafast device types in both through-hole and surface
mount packages.
Package “A”
or D-5A
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
• Surface mount package series equivalent to the JEDEC
• Ultrafast recovery 2.5 Amp rectifier series 50 to 150 V
registered 1N5802 to 1N5806 series
• Military and other high-reliability applications
• Switching power supplies or other applications
requiring extremely fast switching & low forward loss
• High forward surge current capability
• Low thermal resistance
• Voidless hermetically sealed glass package
• Extremely robust construction
• Triple-layer passivation
• Internal “Category I” Metallurgical bonds
• Controlled avalanche with peak reverse power
• JAN, JANTX, JANTXV, and JANS available per MIL-PRF-
capability
19500/477
• Inherently radiation hard as described in Microsemi
• Axial-leaded equivalents available (see 1N5802 thru 1N5806)
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
• Junction Temperature: -65oC to +175oC
• Storage Temperature: -65oC to +175oC
• Average Rectified Forward Current (IO): 2.5 A @ TEC = 75ºC
• Thermal Resistance: 13 ºC/W junction to end cap
• Thermal Impedance: 4.5oC/W @ 10 ms heating time
• Forward Surge Current: 35 Amps @ 8.3 ms half-sine
• Capacitance: 25 pF @ VR = 10 Volts, f = 1 MHz
• Solder temperature: 260ºC for 10 s (maximum)
• CASE: Hermetically sealed voidless hard glass with
Tungsten slugs
• TERMINALS: End caps are Copper with Tin/Lead
(Sn/Pb) finish. Note: Previous inventory had solid
Silver end caps with Tin/Lead (Sn/Pb) finish.
• MARKING and POLARITY: Cathode band only
• Tape & Reel option: Standard per EIA-481-B
• Weight: 193 mg
• See package dimensions and recommended pad
layout on last page
ELECTRICAL CHARACTERISTICS
WORKING BREAKDOWN
AVERAGE
RECTIFIED RECTIFIED
CURRENT CURRENT
AVERAGE
MAXIMUM
FORWARD
VOLTAGE
@ 1 A
(8.3 ms pulse)
VF
REVERSE
CURRENT
(MAX)
SURGE
CURRENT RECOVERY
(MAX)
REVERSE
PEAK
REVERSE
VOLTAGE
VOLTAGE
(MIN.)
@ 100μA
TIME (MAX)
(NOTE 4)
TYPE
I
@
I
@
@ V
I
O1
O2
RWM
FSM
V
t
rr
IR
(NOTE 3)
V
TEC=+75ºC
(NOTE 1)
AMPS
TA=+55ºC
(Note 2)
AMPS
RWM
BR
VOLTS
VOLTS
VOLTS
AMPS
ns
μA
25oC
100oC 25oC 125oC
1N5802US
1N5803US
1N5804US
1N5805US
1N5806US
50
75
100
125
150
55
80
110
135
160
2.5
2.5
2.5
2.5
2.5
1.0
1.0
1.0
1.0
1.0
0.875
0.800
0.800
0.800
1
1
1
1
1
175
175
175
175
175
35
35
35
35
35
25
25
25
25
25
0.875
0.875
NOTE 1: IO1 is rated at 2.5 A @ TEC = 75º. Derate at 50 mA/ºC for TEC above 125ºC.
NOTE 2: IO2 is rated at 1.0 A @ TA = 55ºC for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where TJ(max) does not exceed 175ºC. Derate at 8.33 mA/ºC for TA above 55ºC.
NOTE 3: TA = 25oC @ IO = 1.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals
NOTE 4: IF = 0.5 A, IRM = 0.5 A, IR(REC) = .05 A
Copyright © 2009
10-06-2009 REV C; SD41A.pdf
Microsemi
Page 1
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