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1N5803US

更新时间: 2024-11-16 17:00:31
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EIC /
页数 文件大小 规格书
1页 135K
描述
Fast / Super Fast Recovery Rectifiers

1N5803US 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMA, 2 PINReach Compliance Code:compliant
风险等级:5.42Is Samacsys:N
其他特性:HIGH RELIABILITY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:75 V
最大反向恢复时间:0.025 µs表面贴装:YES
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N5803US 数据手册

  
www.eicsemi.com  
GLASS PASSIVATED JUNCTION  
ULTRA FAST RECTIFIERS  
1N5802US - 1N5806US  
PRV : 50 - 150 Volts  
Io : 2.5 Amperes  
SMA (DO-214AC)  
1.1 ± 0.3  
FEATURES :  
* Glass passivated junction chip  
* High current capability  
* High surge current capability  
* High reliability  
* Low reverse current  
* Low forward voltage drop  
* Ultrafast recovery time  
* Pb / RoHS Free  
0.2 ± 0.07  
1.2 ± 0.2  
2.1 ± 0.2  
2.6 ± 0.15  
2.0 ± 0.2  
MECHANICAL DATA :  
* Case : SMA Molded plastic  
Dimensions in millimeters  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Lead Formed for Surface Mount  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
* Weight : 0.067 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
SYMBOL 1N5802US 1N5803US 1N5804US 1N5805US 1N5806US UNIT  
VRWM  
Maximum Working Peak Reverse Voltage  
Minimum Breakdown Voltage @ 100µA  
50  
55  
75  
80  
100  
110  
125  
135  
150  
160  
V
V
VBR(Min)  
2.5 (TL = 75 °C, Note 1)  
1.0 (Ta = 55 °C)  
IF(AV)  
Maximum Average Forward Current  
A
Maximum Peak Forward Surge Current,  
8.3ms Single half sine wave superimposed  
on rated load (JEDEC Method)  
IFSM  
35  
A
VF  
IR  
Maximum Peak Forward Voltage at IF = 1.0 A.  
Maximum DC Reverse Current  
0.875  
1.0  
V
μA  
IR(H)  
Trr  
TJ  
at Rated DC Blocking Voltage  
50 (Ta = 100 °C)  
25  
Maximum Reverse Recovery Time (Note2)  
Junction Temperature Range  
ns  
°C  
°C  
- 65 to + 175  
- 65 to + 175  
TSTG  
Storage Temperature Range  
Notes :  
(1) IF(AV) = 2.5A @ TL=75°C. Derate at 25mA/°C for TL above 125°C.  
(2) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.  
Page 1 of 1  
Rev. 01 : July 16, 2007  

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