5秒后页面跳转
1N5804 PDF预览

1N5804

更新时间: 2024-04-09 18:58:13
品牌 Logo 应用领域
EIC /
页数 文件大小 规格书
1页 579K
描述
Glass Passivated Rectifiers

1N5804 数据手册

  
Certificate TH97/10561QM  
Certificate TW00/17276EM  
GLASS PASSIVATED JUNCTION  
1N5802 - 1N5806  
ULTRA FAST RECTIFIERS  
PRV : 50 - 150 Volts  
Io : 2.5 Amperes  
DO - 41  
FEATURES :  
* Glass passivated chip  
* High current capability  
* High surge current capability  
* High reliability  
1.00 (25.4)  
0.107 (2.7)  
MIN.  
0.080 (2.0)  
0.205 (5.2)  
0.161 (4.1)  
* Low reverse current  
* Low forward voltage drop  
* Ultrafast recovery time  
* Pb / RoHS Free  
1.00 (25.4)  
0.034 (0.86)  
MIN.  
0.028 (0.71)  
MECHANICAL DATA :  
* Case : DO-41 Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
Method 208 guaranteed  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
Dimensions in inches and ( millimeters )  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specifie.d  
Single phase, half wave,60 Hz, resistive or inductive load.  
For capacitive load, derate current by20%.  
RATING  
SYMBOL 1N5802  
1N5803  
75  
1N5804  
100  
1N5805  
125  
1N5806 UNIT  
Maximum Working Peak Reverse Voltage  
Minimum Breakdown Voltage @ 100µA  
VRWM  
50  
55  
150  
160  
V
V
VBR(Min)  
80  
110  
135  
2.5 (TL = 75°C, Note 1)  
1.0 (Ta = 55°C)  
Maximum Average Forward Current  
IF(AV)  
IFSM  
A
Maximum Peak Forward Surge Current,  
8.3ms Single half sine wave superimposed  
on rated load (JEDEC Method)  
35  
A
Maximum Peak Forward Voltage at IF = 1.0 A.  
Maximum DC Reverse Current  
VF  
IR  
0.875  
1.0  
V
μA  
at Rated DC Blocking Voltage  
IR(H)  
Trr  
50 (Ta = 100°C)  
25  
Maximum Reverse Recovery Time (Note 3)  
Junction Temperature Range  
ns  
°C  
°C  
TJ  
- 65 to + 175  
- 65 to + 175  
Storage Temperature Range  
TSTG  
Notes :  
(1) IF(AV) = 2.5A @ TL=75°C at 3/8 inc lead length. Derate at25mA/°C for TL above75°C.  
(2) Reverse Recovery Test Conditions: IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.  
Page 1 of 1  
Rev. 0 : January 16, 2007  

与1N5804相关器件

型号 品牌 描述 获取价格 数据表
1N5804CSM4 SEME-LAB HIGH EFFICIENCY POWER RECTIFIER IN A CERAMIC SURFACE MOUNT PACKAGE

获取价格

1N5804HR-PBF DIGITRON Rectifier Diode

获取价格

1N5804R MICROSEMI Rectifier Diode, 1 Element, Silicon,

获取价格

1N5804S SENSITRON Rectifier Diode, 1 Phase, 1 Element, 2.5A, Silicon,

获取价格

1N5804-TR MICROSEMI Rectifier Diode, 1 Element, Silicon, HERMETIC SEALED, GLASS, A, 2 PIN

获取价格

1N5804US MICROSEMI RECTIFIERS HIGH EFFICIENCY, ESP, 2.5 AMP TO 20 AMP

获取价格