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1N5518_03 PDF预览

1N5518_03

更新时间： 2024-09-09 07:22:31
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美高森美 - MICROSEMI /
页数 文件大小 规格书
2页 111K
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LOW REVERSE LEAKAGE CHARACTERISTICS

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1N5518_03 数据手册

 浏览型号1N5518_03的Datasheet PDF文件第2页 
• 1N5518-1 THRU 1N5546B-1 AVAILABLE IN JAN, JANTX AND JANTXV  
PER MIL-PRF-19500/437  
1N5518 thru 1N5546D  
and  
• LOW REVERSE LEAKAGE CHARACTERISTICS  
• LOW NOISE CHARACTERISTICS  
• DOUBLE PLUG CONSTRUCTION  
• METALLURGICALLY BONDED  
1N5518B-1 thru 1N5546B-1  
MAXIMUM RATINGS  
Junction and Storage Temperature: -65°C to +175°C  
DC Power Dissipation: 500 mW @ +50°C  
Power Derating: 4 mW / °C above +50°C  
Forward Voltage @ 200mA: 1.1 volts maximum  
ELECTRICAL CHARACTERISTICS @ 25°C  
B-C-D  
SUFFIX  
MAXIMUM  
DC ZENER  
CURRENT  
B-C-D SUFFIX  
MAX. NOISE  
DENSITY  
@1  
JEDEC  
TYPE  
NOMINAL  
ZENER  
ZENER  
TEST  
MAX. ZENER  
IMPEDANCE  
MAXIMUM REVERSE  
LEAKAGE CURRENT  
REGULATION  
FACTOR  
LOW  
V
Z
NUMBER VOLTAGE  
@ 1  
CURRENT B-C-D SUFFIX  
@ 1  
CURRENT  
Z=250µ  
A
V
1
Z
l
V
= VOLTS  
1
N
³V  
Z
1
Z
ZT  
ZT  
ZT  
ZT  
R
R
ZM  
D
ZL  
(NOTE 1)  
(NOTE 2)  
(NOTE 3)  
(NOTE 4)  
(NOTE 5)  
NON & A-  
SUFFIX  
B-C-D-  
SUFFIX  
√
VOLTS  
mAdc  
OHMS  
µ
Adc  
mAdc  
µ V/ HZ  
VOLTS  
mAdc  
1N5518B  
1N5519B  
1N5520B  
1N5521B  
1N5522B  
3.3  
3.6  
3.9  
4.3  
4.7  
20  
20  
20  
20  
10  
26  
24  
22  
18  
22  
5.0  
3.0  
1.0  
3.0  
2.0  
0.90  
0.90  
0.90  
1.0  
1.0  
1.0  
1.0  
1.5  
2.0  
115  
105  
98  
88  
81  
0.5  
0.5  
0.5  
0.5  
0.5  
0.90  
0.90  
0.85  
0.75  
0.60  
2.0  
2.0  
2.0  
2.0  
1.0  
1.5  
1N5523B  
1N5524B  
1N5525B  
1N5526B  
1N5527B  
5.1  
5.6  
6.2  
6.8  
7.5  
5.0  
3.0  
1.0  
1.0  
1.0  
26  
30  
30  
30  
35  
2.0  
2.0  
1.0  
1.0  
0.5  
2.0  
3.0  
4.5  
5.5  
6.0  
2.5  
3.5  
5.0  
6.2  
6.8  
75  
68  
61  
56  
51  
0.5  
1.0  
1.0  
1.0  
2.0  
0.65  
0.30  
0.20  
0.10  
0.05  
0.25  
0.25  
0.01  
0.01  
0.01  
1N5528B  
1N5529B  
1N5530B  
1N5531B  
1N5532B  
8.2  
9.1  
10.0  
11.0  
12.0  
1.0  
1.0  
1.0  
1.0  
1.0  
40  
45  
60  
80  
90  
0.5  
0.1  
0.05  
0.05  
0.05  
6.5  
7.0  
8.0  
9.0  
9.5  
7.5  
8.2  
9.1  
9.9  
10.8  
46  
42  
38  
35  
32  
4.0  
4.0  
4.0  
5.0  
10  
0.05  
0.05  
0.10  
0.20  
0.20  
0.01  
0.01  
0.01  
0.01  
0.01  
FIGURE 1  
DESIGN DATA  
1N5533B  
1N5534B  
1N5535B  
1N5536B  
1N5537B  
13.0  
14.0  
15.0  
16.0  
17.0  
1.0  
1.0  
1.0  
1.0  
1.0  
90  
0.01  
0.01  
0.01  
0.01  
0.01  
10.5  
11.5  
12.5  
13.0  
14.0  
11.7  
12.6  
13.5  
14.4  
15.3  
29  
27  
25  
24  
22  
15  
20  
20  
20  
20  
0.20  
0.20  
0.20  
0.20  
0.20  
0.01  
0.01  
0.01  
0.01  
0.01  
100  
100  
100  
100  
CASE: Hermetically sealed glass  
case. DO – 35 outline.  
1N5538B  
1N5539B  
1N5540B  
1N5541B  
1N5542B  
18.0  
19.0  
20.0  
22.0  
24.0  
1.0  
1.0  
1.0  
1.0  
1.0  
100  
100  
100  
100  
100  
0.01  
0.01  
0.01  
0.01  
0.01  
15.0  
16.0  
17.0  
18.0  
20.0  
16.2  
17.1  
18.0  
19.8  
21.6  
21  
20  
19  
17  
16  
20  
20  
20  
20  
20  
0.20  
0.20  
0.20  
0.25  
0.30  
0.01  
0.01  
0.01  
0.01  
0.01  
LEAD MATERIAL: Copper clad steel.  
LEAD FINISH: Tin / Lead  
1N5543B  
1N5544B  
1N5545B  
1N5546B  
25.0  
28.0  
30.0  
33.0  
1.0  
1.0  
1.0  
1.0  
100  
100  
100  
100  
0.01  
0.01  
0.01  
0.01  
21.0  
23.0  
24.0  
28.0  
22.4  
25.2  
27.0  
29.7  
15  
14  
13  
12  
20  
20  
20  
20  
0.35  
0.40  
0.45  
0.50  
0.01  
0.01  
0.01  
0.01  
THERMAL RESISTANCE: (R  
250 °C/W maximum at L = .375 inch  
):  
OJEC  
THERMAL IMPEDANCE: (Z  
°C/W maximum  
): 35  
OJX  
NOTE 1  
No Suffix type numbers are +20% with guaranteed limits for only V , l , and V . Units  
Z R F  
with “A” suffix are +10% with guaranteed limits for V , l , and V . Units with guaranteed limits for  
Z
R
F
all six parameters are indicated by a “B” suffix for +5.0% units, “C” suffix for +2.0% and “D” suffix  
for +1.0%.  
POLARITY: Diode to be operated with  
the banded (cathode) end positive.  
NOTE 2  
Zener voltage is measured with the device junction in thermal equilibrium at an ambient  
temperature of 25°C + 3°C.  
MOUNTING POSITION: Any.  
NOTE 3  
NOTE 4  
NOTE 5  
Zener impedance is derived by superimposing on 1  
A 60Hz rms a.c. current equal to 10% of 1  
ZT ZT.  
Reverse leakage currents are measured at V as shown on the table.  
R
³VZ is the maximum difference between VZ at lZT and V at l measured with  
ZL  
Z
the device junction in thermal equilibrium at the ambient temperature of +25°C +3°C.  
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841  
PHONE (978) 620-2600  
FAX (978) 689-0803  
WEBSITE: http://www.microsemi.com  
61  
12

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