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1N458A.TR PDF预览

1N458A.TR

更新时间: 2024-01-20 12:02:32
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
2页 27K
描述
DIODE 0.5 A, 150 V, SILICON, SIGNAL DIODE, DO-204AH, ROHS COMPLIANT, DO-35, 2 PIN, Signal Diode

1N458A.TR 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:O-PALF-W2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.26外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JEDEC-95代码:DO-35JESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值正向电流:4 A
元件数量:1端子数量:2
最高工作温度:175 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.5 W认证状态:Not Qualified
最大重复峰值反向电压:150 V最大反向电流:0.025 µA
表面贴装:NO端子面层:MATTE TIN
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N458A.TR 数据手册

 浏览型号1N458A.TR的Datasheet PDF文件第2页 
1N458A  
DO-35  
COLOR BAND DENOTES CATHODE  
Small Signal Diode  
Absolute Maximum Ratings *  
T
= 25°C unless otherwise noted  
A
Symbol  
Parameter  
Maximum Repetitive Reverse Voltage  
Average Rectified Forward Current  
Value  
150  
Units  
V
V
RRM  
I
I
500  
mA  
F(AV)  
FSM  
Non-repetitive Peak Forward Surge Current  
Pulse Width = 1.0 second  
1.0  
4.0  
A
A
Pulse Width = 1.0 microsecond  
T
T
Storage Temperature Range  
-65 to +200  
175  
°C  
°C  
STG  
J
Operating Junction Temperature  
* These ratings are limiting values above which the serviceability of the diode may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 200 degrees C.  
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
500  
Units  
mW  
P
Power Dissipation  
Thermal Resistance, Junction to Ambient  
D
R
300  
°C/W  
θJA  
Electrical Characteristics T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Test Conditions  
Min.  
Max.  
Units  
V
V
Breakdown Voltage  
I
I
= 100µA  
150  
V
V
R
R
F
Forward Voltage  
Reverse Leakage  
= 100mA  
1.0  
F
I
V
V
= 125V  
= 125V, T = 150°C  
25  
5
nA  
µA  
R
R
R
A
©2004 Fairchild Semiconductor Corporation  
1N458A, Rev. A1  

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