5秒后页面跳转
1N459 PDF预览

1N459

更新时间: 2024-11-13 22:04:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 整流二极管信号二极管
页数 文件大小 规格书
2页 28K
描述
Small Signal Diode

1N459 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DO-35
包装说明:O-LALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.13
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJEDEC-95代码:DO-35
JESD-30 代码:O-LALF-W2JESD-609代码:e3
最大非重复峰值正向电流:0.4 A元件数量:1
端子数量:2最高工作温度:200 °C
最大输出电流:0.2 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.5 W
认证状态:Not Qualified最大重复峰值反向电压:200 V
子类别:Rectifier Diodes表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N459 数据手册

 浏览型号1N459的Datasheet PDF文件第2页 
November 2004  
1N459/A  
Small Signal Diode  
DO-35  
Color Band Denotes Cathode  
Absolute Maximum Ratings *  
T
= 25°C unless otherwise noted  
a
Symbol  
Parameter  
Maximum Repetitive Reverse Voltage  
Average Rectified Forward Current  
Value  
200  
Unit  
V
V
RRM  
F(AV)  
FSM  
I
I
500  
mA  
Non-repetitive Peak Forward Surge Current  
Pulse Width = 1.0 second  
1.0  
4.0  
A
A
Pulse Width = 1.0 microsecond  
T
T
Storage Temperature Range  
-65 to +200  
175  
°C  
°C  
STG  
J
Operating Junction Temperature  
* These ratings are limiting values above which the serviceability of the diode may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 200 degrees C.  
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
500  
Unit  
mW  
P
Power Dissipation  
Thermal Resistance, Junction to Ambient  
D
R
300  
°C/W  
θJA  
Electrical Characteristics  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Conditions  
Min.  
Max  
Units  
V
V
Breakdown Voltage  
I
= 100µA  
200  
V
R
F
R
Forward Voltage  
1N459A  
I
I
= 3mA  
= 100mA  
1.0  
1.0  
V
V
F
F
I
Reverse Leakage  
1N459  
V
= 175V  
R
25  
5
nA  
µA  
R
1N459A V = 175V, T = 150°C  
R
A
C
Total Capacitance  
1N459A V = 0, f = 1.0MHz  
6.0  
pF  
T
R
©2004 Fairchild Semiconductor Corporation  
1N459/A Rev. 1.0.0  
1
www.fairchildsemi.com  

1N459 替代型号

型号 品牌 替代类型 描述 数据表
1N459TR FAIRCHILD

类似代替

Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, DO-35,
1N459ATR FAIRCHILD

类似代替

Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, DO-35,
1N459_T50R FAIRCHILD

功能相似

Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, DO-35,

与1N459相关器件

型号 品牌 获取价格 描述 数据表
1N459.TR FAIRCHILD

获取价格

DIODE 0.2 A, SILICON, SIGNAL DIODE, DO-35, Signal Diode
1N459.TR TI

获取价格

0.2A, 200V, SILICON, SIGNAL DIODE, DO-35
1N459/A ETC

获取价格

LOW LEAKAGE DIODES
1N459_0412 FAIRCHILD

获取价格

Small Signal Diode
1N459_10 MICROSEMI

获取价格

SWITCHING DIODE
1N459_T50R FAIRCHILD

获取价格

Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, DO-35,
1N4590 NJSEMI

获取价格

General Purpose Rectifier
1N4590 MICROSEMI

获取价格

Silicon Power Rectifier
1N4590E3 MICROSEMI

获取价格

Rectifier Diode, 1 Phase, 1 Element, 150A, 400V V(RRM), Silicon, DO-205AA, METAL, DO-8, 1
1N4590F MICROSEMI

获取价格

Rectifier Diode, 1 Element, 150A, 400V V(RRM),