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1N458ATR PDF预览

1N458ATR

更新时间: 2024-02-14 01:26:32
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 整流二极管
页数 文件大小 规格书
2页 33K
描述
Maximum Repetitive Reverse Voltage

1N458ATR 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.65外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:O-LALF-W2元件数量:1
端子数量:2最大输出电流:0.2 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM最大功率耗散:0.5 W
认证状态:Not Qualified最大重复峰值反向电压:150 V
最大反向电流:0.025 µA表面贴装:NO
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

1N458ATR 数据手册

 浏览型号1N458ATR的Datasheet PDF文件第2页 
1N458A  
DO-35  
COLOR BAND DENOTES CATHODE  
Small Signal Diode  
Absolute Maximum Ratings *  
T
= 25°C unless otherwise noted  
A
Symbol  
Parameter  
Maximum Repetitive Reverse Voltage  
Average Rectified Forward Current  
Value  
150  
Units  
V
V
RRM  
I
I
500  
mA  
F(AV)  
FSM  
Non-repetitive Peak Forward Surge Current  
Pulse Width = 1.0 second  
1.0  
4.0  
A
A
Pulse Width = 1.0 microsecond  
T
T
Storage Temperature Range  
-65 to +200  
175  
°C  
°C  
STG  
J
Operating Junction Temperature  
* These ratings are limiting values above which the serviceability of the diode may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 200 degrees C.  
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
500  
Units  
mW  
P
Power Dissipation  
Thermal Resistance, Junction to Ambient  
D
R
300  
°C/W  
θJA  
Electrical Characteristics T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Test Conditions  
Min.  
Max.  
Units  
V
V
Breakdown Voltage  
I
I
= 100µA  
150  
V
V
R
R
F
Forward Voltage  
Reverse Leakage  
= 100mA  
1.0  
F
I
V
V
= 125V  
= 125V, T = 150°C  
25  
5
nA  
µA  
R
R
R
A
©2004 Fairchild Semiconductor Corporation  
1N458A, Rev. A1  

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