1N457A.TR

更新时间： 2024-11-16 13:03:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		信号二极管
页数	文件大小	规格书
2页	61K
描述
DIODE 0.2 A, 70 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode

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中文翻译

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技术参数
数据手册
替代型号

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1N457A.TR 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.32	Is Samacsys：	N
Base Number Matches：	1

1N457A.TR 数据手册

1N457/A

DO-35

Color Band Denotes Cathode

Small Signal Diode

Absolute Maximum Ratings*

T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_RRM

I_F(AV)

I_FSM

Maximum Repetitive Reverse Voltage

Average Rectified Forward Current

200

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second

1.0

4.0

Pulse Width = 1.0 microsecond

Storage Temperature Range

-65 to +200

°C

T_stg

T_J

Operating Junction Temperature

175

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 200 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol

Parameter

Value

Units

P_D

Power Dissipation

Thermal Resistance, Junction to Ambient

500

300

R_θJA

C/W

Electrical Characteristics T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Max Units

V_R

V_F

Breakdown Voltage

I_R= 100 µA

Forward Voltage

Reverse Current

Total Capacitance

I_F= 20 mA

I_F= 100 mA

V_R= 60 V

V_R= 60 V, T_A= 150°C

V_R= 0, f = 1.0 MHz

1.0

µA

1N457

1N457A

I_R

C_T

8.0

1N457

1N457/A, Rev. A

2002 Fairchild Semiconductor Corporation

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1N457A.TR 替代型号

型号	品牌	替代类型	描述	数据表
1N459ATR	FAIRCHILD	功能相似	Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, DO-35,

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