Datasheet > 1N457TR

1N457TR

更新时间： 2024-11-15 11:12:15

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
3页	129K
描述
高电导、低泄漏二极管

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中文翻译

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数据手册
替代型号

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1N457TR 数据手册

DATA SHEET

www.onsemi.com

Small Signal Diode

1N457, 1N457A

ABSOLUTE MAXIMUM RATINGS

AXIAL LEAD

(DO−35)

(T = 25°C unless otherwise noted) (Notes 1, 2, 3)

CASE 017AG

Symbol

Rating

Value

Unit

(Color Band Denotes Cathode)

RRM

Maximum Repetitive Reverse Voltage

Average Rectified Forward Current

200

F(AV)

MARKING DIAGRAM

Non−repetitive Peak Forward Surge

Current

FSM

Pulse Width = 1.0 s

Pulse Width = 1.0 ms

1.0

4.0

Storage Temperature Range

−65 to +200

°C

STG

Operating Junction Temperature

175

457 / 457A = Specific Device Code

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

= Date Code

Band Color: Black

1. These ratings are limiting values above which the serviceability of any

semiconductor device may be impaired.

2. These ratings are based on a maximum junction temperature of 200°C.

3. These are steady limits. The factory should be consulted on applications

involving pulsed or low duty cycle operations.

ORDERING INFORMATION

†

Device

Package

Shipping

1N457

DO−35

(Pb−Free)

5,000 Units /

Bulk

THERMAL CHARACTERISTICS

Symbol

Parameter

Power Dissipation

Thermal Resistance, Junction to Ambient

Max

500

300

Unit

1N457A

1N457TR

DO−35

(Pb−Free)

5,000 Units /

Bulk

°C/W

DO−35

(Pb−Free)

10,000 Units /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

ELECTRICAL CHARACTERISTICS

(T = 25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

Max

Unit

Breakdown Voltage

Forward Voltage

= 100 mA

−

1N457

1N457A

I = 20 mA

−

1.0

I = 100 mA

Reverse Leakage

Total Capacitance

= 60 V

−

= 60 V, T = 150°C

1N457

= 0, f = 1.0 MHz

−

8.0

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Publication Order Number:

June, 2023 − Rev. 2

1N457A/D

12 3

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1N457TR 替代型号

型号	品牌	替代类型	描述	数据表
1N457TR	FAIRCHILD	功能相似	Rectifier Diode, 1 Element, 0.2A, 70V V(RRM), Silicon, DO-35, DO-35, 2 PIN
JAN1N457	MICROSEMI	功能相似	Rectifier Diode, 1 Element, 0.075A, Silicon, SIMILAR TO DO-7, 2 PIN
1N457	FAIRCHILD	功能相似	Small Signal Diode

与1N457TR相关器件

型号	品牌	获取价格	描述	数据表
1N457X	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.2A, 70V V(RRM), Silicon,
1N458	NJSEMI	获取价格	LOW LEAKAGE DIFFUSED SILICON PLANAR DIODE
1N458	MICROSEMI	获取价格	SWITCHING DIODE
1N458	TI	获取价格	0.055A, SILICON, SIGNAL DIODE
1N458	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 0.2A, 150V V(RRM), Silicon, DO-35, GLASS PACKAGE-2
1N458	NSC	获取价格	High Conductance Low Leakage Diode
1N458/A	ETC	获取价格	LOW LEAKAGE DIODES
1N458_10	MICROSEMI	获取价格	SWITCHING DIODE
1N4580	MICROSEMI	获取价格	6.4 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
1N4580	CDI-DIODE	获取价格	6.4 VOLT NOMINAL ZENER VOLTAGE + 5%

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