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1N457A.T50A PDF预览

1N457A.T50A

更新时间: 2024-11-17 06:31:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
1页 26K
描述
Rectifier Diode, 1 Element, 0.2A, 70V V(RRM), Silicon, DO-35

1N457A.T50A 数据手册

  
1N457/A  
DO-35  
Color Band Denotes Cathode  
Small Signal Diode  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VRRM  
IF(AV)  
IFSM  
Maximum Repetitive Reverse Voltage  
70  
V
Average Rectified Forward Current  
200  
mA  
Non-repetitive Peak Forward Surge Current  
Pulse Width = 1.0 second  
1.0  
4.0  
A
A
Pulse Width = 1.0 microsecond  
Storage Temperature Range  
-65 to +200  
°C  
Tstg  
TJ  
Operating Junction Temperature  
175  
°C  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 200 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
PD  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
500  
300  
mW  
RθJA  
C/W  
°
Electrical Characteristics TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Max Units  
VR  
VF  
Breakdown Voltage  
70  
V
IR = 100 µA  
Forward Voltage  
Reverse Current  
Total Capacitance  
IF = 20 mA  
IF = 100 mA  
VR = 60 V  
VR = 60 V, TA = 150°C  
VR = 0, f = 1.0 MHz  
1.0  
1.0  
25  
5
V
V
nA  
µA  
pF  
1N457  
1N457A  
IR  
CT  
8.0  
1N457  
1N457/A, Rev. A  
2002 Fairchild Semiconductor Corporation  

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