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1N4448WS PDF预览

1N4448WS

更新时间: 2024-11-02 11:12:15
品牌 Logo 应用领域
安森美 - ONSEMI 信号二极管
页数 文件大小 规格书
5页 226K
描述
小信号二极管

1N4448WS 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:R-PDSO-F2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:1 week风险等级:0.84
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.72 V
JESD-30 代码:R-PDSO-F2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
最大输出电流:0.15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向恢复时间:0.004 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N4448WS 数据手册

 浏览型号1N4448WS的Datasheet PDF文件第2页浏览型号1N4448WS的Datasheet PDF文件第3页浏览型号1N4448WS的Datasheet PDF文件第4页浏览型号1N4448WS的Datasheet PDF文件第5页 
Small Signal Diodes  
1N4148WS, 1N4448WS,  
1N914BWS  
Features  
General Purpose Diodes  
Fast Switching Device (T < 4.0 ns)  
RR  
www.onsemi.com  
Very Small and Thin SMD Package  
Moisture Level Sensitivity 1  
T
Matte Tin (Sn) Lead Finish  
2
SOD323FL  
Green Mold Compound  
(Flat Lead)  
CASE 477AB  
These Devices are PbFree and are RoHS Compliant  
1
ABSOLUTE MAXIMUM RATINGS  
Band Indicates Cathode  
Parameter  
Symbol  
Value  
100  
75  
Unit  
V
NonRepetitive Peak Reverse Voltage  
Repetitive Peak Reverse Voltage  
Repetitive Peak Forward Current  
Continuous Forward Current  
V
V
RSM  
RRM  
FRM  
ELECTRICAL SYMBOL  
V
I
300  
150  
mA  
mA  
A
(1)  
(2)  
I
O
Cathode  
Anode  
Nonrepetitive Peak Forward Surge  
Current  
I
FSM  
DEVICE MARKING INFORMATION  
See general marking information in the device marking  
section on page 3 of this data sheet.  
Pulse Width = 1.0 s  
Pulse Width = 1.0 ms  
1.0  
4.0  
Operating Junction Temperature  
Storage Temperature Range  
T
+150  
°C  
°C  
J
T
55 to +150  
STG  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 3 of  
this data sheet.  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL CHARACTERISTICS (Values are at T = 25°C unless otherwise noted.)  
A
Symbol  
Parameter  
Value  
200  
Unit  
mW  
P
D
Power Dissipation (T = 25°C)  
C
R
Thermal Resistance, JunctiontoAmbient (Note 1)  
500  
°C/W  
q
JA  
1. Device mounted on FR4 PCB minimum land pad.  
ELECTRICAL CHARACTERISTICS (Values are at T = 25°C unless otherwise noted.)  
A
Symbol  
Parameter  
Conditions  
= 100 mA  
Min  
100  
75  
Max  
Unit  
BV  
Breakdown Voltage  
Reverse Current  
Forward Voltage  
V
I
I
R
R
= 5 mA  
R
I
R
V
V
= 20 V  
= 75 V  
25  
5
nA  
mA  
V
R
R
V
F
1N4448WS / 1N914BWS  
I = 5 mA  
0.62  
0.72  
1
F
1N4148WS  
I = 10 mA  
F
1N4448WS / 1N914BWS  
I = 100 mA  
F
1
C
Diode Capacitance  
V
= 0, f = 1.0 MHz  
4
pF  
ns  
O
R
T
RR  
Reverse Recovery Time  
I = 10 mA, I = 60 mA,  
4
F
RR  
R
I
= 1 mA, R = 100 W  
L
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
© Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
July, 2021 Rev. 3  
1N4148WS/D  
 

1N4448WS 替代型号

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