Datasheet > 1N4448

1N4448

更新时间： 2023-12-06 20:06:26

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描述
Switching Diodes Switch detector

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1N4448 数据手册

1N4448

AXIAL LEADED FAST SWITCHING DIODE

DO-35(GLASS)

Features

1.0 2(26.0)

MIN.

Fast Switching Speed

General Purpose Rectification

0.079(2.0)

MAX

Silicon Epitaxial Planar Construction

0.165 (4.2)

MAX

Mechanical Data

Case: DO-35, glass case

Polarity: Color band denotes cathode

Weight: 0.004 ounces, 0.13 grams

1.0 2(26.0)

MIN.

0.020(0.52)

TYP

Dimensions in millimeters

T_A= 25ꢀC unless otherwise specified

Maximum Ratings

Parameter

Repetitive peak reverse voltage

Reverse voltage

Test Conditions

Type

Symbol

RRM

Value

100

Unit

Peak forward surge current

Repetitive peak forward current

Forward current

Average forward current

Power dissipation

t =1 s

500

300

150

440

500

200

FSM

FRM

V =0

FAV

l=4mm, T =45 C

l=4mm, T 25 C

Junction temperature

Storage temperature range

stg

–65...+200

T = 25 C

Maximum Thermal Resistance

Parameter

Junction ambient

Test Conditions

Symbol

Value

350

Unit

K/W

l=4mm, T =constant

thJA

T = 25 C

Electrical Characteristics

Parameter

Forward voltage

Test Conditions

I =5mA

Type

1N4448

Symbol Min

Typ Max Unit

0.62

0.72

I =100mA

1N4448

Reverse current

V =20 V

V =20 V, T =150 C

V =75 V

Breakdown voltage

I =100 A, t /T=0.01,

(BR)

100

t =0.3ms

Diode capacitance

Rectification efficiency

V =0, f=1MHz, V =50mV

V =2V, f=100MHz

Reverse recovery time I =I =10mA, i =1mA

I =10mA, V =6V,

i =0.1xI , R =100

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