5秒后页面跳转
1N4154 PDF预览

1N4154

更新时间: 2024-11-06 22:37:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管
页数 文件大小 规格书
5页 131K
描述
High Conductance Fast Diode

1N4154 数据手册

 浏览型号1N4154的Datasheet PDF文件第2页浏览型号1N4154的Datasheet PDF文件第3页浏览型号1N4154的Datasheet PDF文件第4页浏览型号1N4154的Datasheet PDF文件第5页 
DISCRETE POWER AND SIGNAL  
TECHNOLOGIES  
1N4154  
General Description:  
Features:  
The high breakdown voltage, fast switching speed and high  
forward conductance of this diode packaged in a DO-35  
miniature Glass Axial leaded package makes it desirable also  
as a general purpose diode.  
500 milliwatt Power Dissipation package.  
Fast Switching Speed,  
Typical capacitance less than 1.0 picofarad.  
Ordering:  
High Conductance  
Fast Diode  
13 inch reel, 50 mm (T50R) & 26 mm (T26R) Tape;  
10,000 units per reel.  
Absolute Maximum Ratings* TA = 25OC unless otherwise noted  
Sym  
Parameter  
Value  
Units  
Tstg  
TJ  
Storage Temperature  
-65 to +200  
175  
OC  
OC  
Operating Junction Temperature  
PD  
Total Power Dissipation at TA = 25OC  
Linear Derating Factor from TA = 25OC  
Thermal Resistance Junction-to-Ambient  
Working Inverse Voltage  
500  
mW  
mW/OC  
OC/W  
V
3.33  
300  
ROJA  
Wiv  
IO  
35  
Average Rectified Current  
100  
mA  
IF  
DC Forward Current (IF)  
300  
mA  
if  
Recurrent Peak Forward Current (IF)  
Peak Forward Surge Current (IFSM) Pulse Width = 1.0 second  
Pulse Width = 1.0 microsecond  
400  
mA  
iF(surge)  
1.0  
Amp  
Amp  
4.0  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired  
0.500 Minimum  
12.70 Typ 1.000  
CATHODE  
BAND  
0.200 (5.08)  
MARKING  
0.120 (3.05)  
LOGO  
1N  
41  
54  
0.022 (0.558) Diameter  
0.018 (0.458) Typ 20 mils  
0.090 (2.28) Diameter  
0.060 (1.53)  
Electrical Characteristics  
TA = 25OC unless otherwise noted  
SYM  
BV  
CHARACTERISTICS  
MIN  
MAX  
UNITS  
TEST CONDITIONS  
Breakdown Voltage  
Reverse Leakage  
35  
V
IR  
=
=
5.0 uA  
25 V  
IR  
100  
100  
nA  
uA  
VR  
VR = 25 V, TA = 150OC  
VF  
CT  
Forward Voltage  
Capacitance  
1.0  
4.0  
4.0  
V
IF  
=
=
30 mA  
pF  
ns  
VR  
0.0 V,f = 1.0 MHz  
TRR Reverse Recovery Time  
IF = 10 mA VR = 6.0 V  
IRR = 1.0 mA, RL = 100 ohms  
© 1997 Fairchild Semiconductor Corporation  
Revision A - September 21, 1998  

与1N4154相关器件

型号 品牌 获取价格 描述 数据表
1N4154_09 FAIRCHILD

获取价格

High Conductance Fast Diode
1N4154_12 VISHAY

获取价格

Small Signal Fast Switching Diodes
1N4154-13 DIODES

获取价格

Rectifier Diode, 1 Element, 0.15A, 25V V(RRM), Silicon, DO-35,
1N4154-1E3 MICROSEMI

获取价格

Rectifier Diode, 1 Element, 0.2A, 35V V(RRM), Silicon, DO-204AH, ROHS COMPLIANT, HERMETIC
1N4154-A DIODES

获取价格

Rectifier Diode, 1 Element, Silicon
1N4154-AP MCC

获取价格

Rectifier Diode, 1 Element, 0.15A, 35V V(RRM), Silicon, DO-35, ROHS COMPLIANT PACKAGE-2
1N4154-B DIODES

获取价格

Rectifier Diode, 1 Element, Silicon
1N4154BK CENTRAL

获取价格

Rectifier Diode, 1 Element, 0.15A, 35V V(RRM), Silicon, DO-35,
1N4154BKLEADFREE CENTRAL

获取价格

Rectifier Diode, 1 Element, 0.15A, 35V V(RRM), Silicon, DO-35,
1N4154-BP MCC

获取价格

Rectifier Diode, 1 Element, 0.15A, 35V V(RRM), Silicon, DO-35, ROHS COMPLIANT PACKAGE-2