Datasheet > 1N4154_09

1N4154_09

更新时间： 2022-05-19 23:51:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		二极管
页数	文件大小	规格书
3页	162K
描述
High Conductance Fast Diode

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1N4154_09 数据手册

July 2009

1N4154

High Conductance Fast Diode

General Description

Features

• 500 milliwatt Power Dissipation package.

• Fast Switching Speed.

The high breakdown voltage, fast switching speed and

high forward conductance of this diode packaged in a

DO-35 miniature Glass Axial leaded package makes it

desirable also as a general purpose diode.

• Typical capacitance less than 1.0 picofarad.

DO-35

Color Band Denotes Cathode

Absolute Maximum Ratings * T = 25°C unless otherwise noted

Symbol

Parameter

Working Inverse Voltage

Value

Unit

Average Rectified Current

100

300

400

DC Forward Current (I )

Recurrent Peak Forward Current (I )

Peak Forward Surge Current (I

)

FSM

F(surge)

Pulse Width = 1.0 second

Pulse Width = 1.0 microsecond

1.0

4.0

Storage Temperature Range

Operating Junction Temperature

-65 to +200

175

°C

STG

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics

Symbol

Parameter

Value

Unit

Total Power Dissipation at T = 25°C

Linear Derating Factor from T = 25°C

500

3.33

mW/°C

Thermal Resistance, Junction to Ambient

300

°C/W

θJA

1N4154 Rev. B0

www.fairchildsemi.com

12 3

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