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1N4154-A PDF预览

1N4154-A

更新时间: 2024-11-07 13:03:31
品牌 Logo 应用领域
美台 - DIODES 二极管开关
页数 文件大小 规格书
2页 63K
描述
Rectifier Diode, 1 Element, Silicon

1N4154-A 技术参数

生命周期:Obsolete包装说明:O-LALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.18外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:O-LALF-W2元件数量:1
端子数量:2最高工作温度:200 °C
最低工作温度:-65 °C封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
最大功率耗散:0.5 W认证状态:Not Qualified
最大反向电流:0.1 µA最大反向恢复时间:0.002 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

1N4154-A 数据手册

 浏览型号1N4154-A的Datasheet PDF文件第2页 
1N4154  
FAST SWITCHING DIODE  
Features  
·
·
·
·
Fast Switching Speed  
Suitable for General Logic Applications  
High Conductance  
Available in Surface Mount Version  
(LL4154)  
A
B
A
C
D
Mechanical Data  
DO-35  
Min  
25.40  
¾
·
Case: DO-35, Plastic  
Dim  
A
Max  
¾
·
Leads: Solderable per MIL-STD-202,  
Method 208  
·
·
·
Marking: Type Number  
Polarity: Cathode Band  
Weight: 0.13 grams (approx.)  
B
4.00  
0.60  
2.00  
C
¾
D
¾
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
1N4154  
Unit  
VRM  
V
Non-Repetitive Peak Reverse Voltage  
35  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
V
25  
VR(RMS)  
IO  
RMS Reverse Voltage  
18  
V
mA  
Average Rectified Output Current (Note 1)  
150  
Non-Repetitive Peak Forward Surge Current @ t £ 1.0s  
@ t = 1.0ms  
0.5  
2.0  
IFSM  
A
Pd  
Power Dissipation (Note 1)  
500  
300  
mW  
K/W  
°C  
RqJA  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
Tj, TSTG  
-65 to +175  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol  
Min  
Max  
Unit  
Test Condition  
IF = 30mA  
VR = 25V  
R = 25V, Tj = 150°C  
VFM  
Maximum Forward Voltage Drop  
¾
1.0  
V
nA  
mA  
IRM  
Cj  
Maximum Peak Reverse Current  
Junction Capacitance  
¾
¾
¾
100  
4.0  
4.0  
V
VR = 0V, f = 1.0MHz  
pF  
ns  
IF = IR = 10mA,  
Irr = 0.1 x IR, RL = 100W  
trr  
Reverse Recovery Time  
Note:  
1. Valid provided that leads are kept at ambient temperature.  
DS12015 Rev. F-2  
1 of 2  
1N4154  

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