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1N4154-BP PDF预览

1N4154-BP

更新时间: 2024-11-09 19:00:15
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
4页 414K
描述
Rectifier Diode, 1 Element, 0.15A, 35V V(RRM), Silicon, DO-35, ROHS COMPLIANT PACKAGE-2

1N4154-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-35
包装说明:ROHS COMPLIANT PACKAGE-2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.18
其他特性:METALLURGICALLY BONDED外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-35
JESD-30 代码:O-XALF-W2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最大输出电流:0.15 A
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.5 W认证状态:Not Qualified
最大重复峰值反向电压:35 V最大反向恢复时间:0.002 µs
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N4154-BP 数据手册

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ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
M C C  
1N4151  
1N4154  
TM  
Micro Commercial Components  
Features  
·
·
Planar Passivated  
500mW Silicon  
Switching Diode  
Metallurgically bonded Construction  
·
·
Moisture Sensitivity Level 1  
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates  
Compliant. See ordering information)  
Maximum Ratings  
l
Operating Temperature: -55oC to +150oC  
Storage Temperature: -55oC to +200oC  
DO-35  
l
Electrical Characteristics @ 25oC Unless Otherwise Specified  
Reverse Voltage  
1N4151  
1N4154  
V R  
50V  
25V  
Peak Reverse  
Voltage  
1N4151  
1N4154  
D
VR M  
75V  
35V  
Average  
Rectifierd Current  
Resistive Load  
f>=50Hz  
Io  
PT O T  
TJ  
150mA  
5 0 0 m W  
200oC  
A
Cathode  
Mark  
Power Dissipation  
Junction  
Temperature  
Peak Forward  
Surge Current  
1N4151  
B
D
IF S M  
8.3ms,half sine  
50mA  
30mA  
C
1N4154  
Maximum  
Instantaneous  
Forward Voltage  
Maximum DC  
IF =30mA  
T J=25o C*  
VF  
1.0V  
Reverse Current  
DIMENSIONS  
At Rated DC  
Blocking Voltage  
1N4151  
1N4154  
Typical Junction  
Capacitance  
1N4151  
T A=25 o C  
IR  
INCHES  
MIN  
M M  
DIM  
NOTE  
V
R 1=50V  
0.05uA  
M A X  
0.166  
0.079  
0.020  
-----  
MIN  
-----  
M A X  
4.20  
2.00  
0.52  
-----  
A
B
C
D
-----  
-----  
0.1uA V R 2=25V  
-----  
-----  
-----  
Measured at  
1.000  
25.40  
CJ  
Trr  
2.0pF  
4.0pF  
1.0MHz,V R =4.0V  
IF =10mA  
1N4154  
Maximum  
Reverse  
Recovery Time  
2.0nS V R =6V  
R L=100ohm  
*Pulse test: Pulse width 300 sec, Duty cycle 2%  
Note: 1. Lead in Glass Exemption Applied, see EU Directive Annex 7(C)-I.  
www.mccsemi.com  
1 of 4  
Revision: C  
2013/02/18  

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