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1N4148X-TP PDF预览

1N4148X-TP

更新时间: 2024-11-15 12:33:39
品牌 Logo 应用领域
美微科 - MCC 整流二极管开关光电二极管PC
页数 文件大小 规格书
3页 229K
描述
200mW Switching Diodes

1N4148X-TP 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:R-PDSO-F2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:1.26Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:360627
Samacsys Pin Count:2Samacsys Part Category:Diode
Samacsys Package Category:Small Outline Diode Flat LeadSamacsys Footprint Name:SOD-523
Samacsys Released Date:2016-08-08 08:19:14Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.715 V
JESD-30 代码:R-PDSO-F2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:2 A
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:0.15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.2 W
认证状态:Not Qualified最大重复峰值反向电压:75 V
最大反向恢复时间:0.004 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

1N4148X-TP 数据手册

 浏览型号1N4148X-TP的Datasheet PDF文件第2页浏览型号1N4148X-TP的Datasheet PDF文件第3页 
M C C  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
1N4148X  
Micro Commercial Components  
Features  
Halogen free available upon request by adding suffix "-HF"  
xꢀ Fast Switching Speed  
xꢀ For General Purpose Switching Applications  
200mW  
Switching Diodes  
xꢀ Surface Mount Package Ideally Suited for Automatic Insertion  
Lead Free Finish/RoHS Compliant("P" Suffix  
designates RoHS Compliant. See ordering information)  
Mechanical Data  
xꢀ Marking Code: T4  
·
Epoxy meets UL 94 V-0 flammability rating  
SOD523  
·
Moisture Sensitivity Level 1  
A
B
Maximum Ratings  
Symbol  
VRM  
Parameter  
Non-Repetitive Peak Reverse Voltage  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
Rating  
Unit  
100  
V
VRRM  
VRWM  
VR  
C
E
75  
V
VR(RMS)  
IFM  
RMS Reverse Voltage  
Forward Continuous Current  
Average Rectified Output Current  
53  
V
mA  
mA  
G
300  
150  
Io  
Peak Forward Surge Current @1.0­s  
@1.0s  
2.0  
1.0  
IFSM  
A
Thermal Resistance Junction to Ambient  
к/W  
R©  
625  
200  
D
JA  
F
PD  
Power dissipation  
Operating and Storage Junction  
Temperature  
mW  
H
к
TJ ,TSTG  
-65 to +150  
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Symbol  
Parameter  
Reverse Breakdown  
Voltage  
Min  
Max  
Test Conditions  
V(BR)  
75V  
---  
IR=10­A  
DIMENSIONS  
Reverse Voltage  
Leakage Current  
1.0­A  
25nA  
VR=75V  
VR=20V  
IR  
---  
INCHES  
MIN  
MM  
DIM  
A
MAX  
.067  
.051  
.033  
.003  
.014  
.006  
.028  
.031  
MIN  
1.50  
1.10  
0.75  
0.01  
0.25  
0.08  
0.50  
0.51  
MAX  
1.70  
1.30  
0.85  
0.07  
0.35  
0.15  
0.70  
0.77  
NOTE  
---  
---  
---  
---  
---  
0.715V  
0.855V  
1.0V  
1.25V  
2.0pF  
IF=5mA  
IF=10mA  
IF=100mA  
IF=150mA  
.059  
.043  
.030  
.001  
.010  
.003  
.020  
.020  
VF  
Forward Voltage  
B
C
CT  
trr  
Total Capacitance  
VR=0V, f=1MHZ  
IR=IF=10mA, RL=100  
¡, Rec. to 1.0mA  
D
E
Reverse Recovery Time  
---  
4.0ns  
F
G
H
www.mccsemi.com  
1 of 3  
Revision: C  
2013/01/01  

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