Datasheet > 1N4149CSM

1N4149CSM

更新时间： 2024-11-13 22:37:55

品牌	Logo	应用领域
SEME-LAB		二极管局域网
页数	文件大小	规格书
1页	15K
描述
SILICON EPITAXIAL PLANAR DIODE

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1N4149CSM 数据手册

1N4149CSM

S E M E

LA B

MECHANICAL DATA

Dimensions in mm (inches)

SILICON EPITAXIAL

PLANAR DIODE

0.51 ± 0.10

(0.02 ± 0.004)

0.31

(0.012)

rad.

General Purpose and

Switching Diode in

Hermetic Ceramic Surface Mount

Package for

1.91 ± 0.10

(0.075 ± 0.004)

0.31

(0.012)

rad.

3.05 ± 0.13

(0.12 ± 0.005)

1.40

(0.055)

max.

1.02 ± 0.10

(0.04 ± 0.004)

High Reliability Applications

A =

SOT23 CERAMIC

(LCC1 PACKAGE)

Underside View

PAD 1 — Anode

PAD 2 — Not Connected PAD 3 — Cathode

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise stated)

case

Parameter

Reverse Voltage

Test Conditions

Min.

Typ.

Max.

100

Unit

Repetitive Peak Reverse Voltage

Average Rectified Forward Current

Forward Current

100

RRM

150

F(AV)

200

Repetitive Peak Forward Current

450

FRM

t = 1µs

2000

500

Non-Repetitive Peak Forward Current

FSM

t = 1s

Power Dissipation at T

= 25 °C

500

tot

amb

CHARACTERISTICS (T

= 25°C unless otherwise stated)

case

Parameter

Forward Voltage

Test Conditions

I = 10mA

Min.

Typ. Max.

Unit

V = 20V

µA

Reverse Current

V = 20V , T = 150°C

Reverse Avalanche Breakdown

Voltage

I = 100µA

100

(BR)R

I = 5µA

Capacitance

V = 0V , f = 1 MHz

Forward Recovery Voltage

I = 50mA , t = 20ns

2.5

I = 10mA to I = 60mA

Reverse Recovery Time

R = 100Ω

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

10/99

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