Datasheet > 1N4149

1N4149

更新时间： 2024-11-15 06:21:11

品牌	Logo	应用领域
SYNSEMI		二极管开关
页数	文件大小	规格书
2页	25K
描述
HIGH SPEED SWITCHING DIODE

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中文翻译

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数据手册

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1N4149 数据手册

HIGH SPEED SWITCHING DIODE

DO - 35

1N4149

PRV : 100 Volts

Io : 150 mA

FEATURES :

1.00 (25.4)

* Silicon Epitaxial Planar Diode

0.079(2.0 )max.

min.

* High reliability

* Low reverse current

* Low forward voltage drop

* High speed switching

* Pb / RoHS Free

0.150 (3.8)

max.

1.00 (25.4)

0.020 (0.52)max.

min.

MECHANICAL DATA :

* Case : DO-35 Glass Case

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

Dimensions in inches and ( millimeters )

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 0.13 gram (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

SYMBOL

VALUE

100

UNIT

VRRM

Maximum Repetitive Peak Reverse Voltage

Maximum Reverse Voltage

150 ¹⁾

500

1.0

IF(AV)

IFSM

Maximum Average Forward Current

Maximum Surge Forward Current at t < 1s and Tj = 25°C

Maximum Power Dissipation , Ta = 25 °C

Maximum Forward Voltage at IF = 10 mA

at VR = 75V

Maximum Reverse Current

Maximum Reverse Recovery Time

Trr

from IF = 10mA to IR = 1mA , VR = 6V , RL = 100W

Junction Temperature Range

175

°C

TSTG

Storage Temperature Range

- 65 to + 175

Note : 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature (DO-35)

Page 1 of 2

Rev. 02 : March 25, 2005

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