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1N4148-TP PDF预览

1N4148-TP

更新时间: 2024-11-01 12:53:51
品牌 Logo 应用领域
美微科 - MCC 整流二极管开关
页数 文件大小 规格书
4页 239K
描述
500mW High Speed Switching Diode 100 Volt

1N4148-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:DO-35
包装说明:O-XALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:6.93
其他特性:HIGH RELIABILITY, METALLURGICALLY BONDED外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JEDEC-95代码:DO-35JESD-30 代码:O-XALF-W2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:2 A元件数量:1
端子数量:2最高工作温度:175 °C
最大输出电流:0.15 A封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.5 W
认证状态:Not Qualified最大重复峰值反向电压:75 V
最大反向恢复时间:0.004 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N4148-TP 数据手册

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M C C  
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20736 Marilla Street Chatsworth  
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TM  
1N4148  
Micro Commercial Components  
Features  
High Reliability  
Low Current Leakage  
Metalurgically Bonded Construction  
Moisture Sensitivity Level 1  
Marking : Cathode band and type number  
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates  
Compliant. See ordering information)  
500mW High Speed  
Switching Diode  
100 Volt  
·
Maximum Ratings  
Operating Temperature: -65? to +175?  
DO-35  
Storage Temperature: -65? to +175?  
Maximum Thermal Resistance: 300K/W Junction To Ambient  
Electrical Characteristics @ 25? Unless Otherwise Specified  
Reverse Voltage  
VR  
75V  
IR=100ČA  
Breakdown Voltage  
VBR  
100V  
D
Average Forward  
Current  
IO  
150mA  
500mW  
Power Dissipation  
PTOT  
A
Cathode  
Mark  
Junction  
Temperature  
TJ  
175?  
B
Peak Forward Surge  
Current  
D
tp = 1.0Čs  
IFSM  
2.0A  
Maximum  
Instantaneous  
Forward Voltage  
C
VF  
1.0V  
IFM = 10mA  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VR=20V; TJ = 25?  
VR=75V; TJ = 25?  
VR=20V; TJ =150?  
25nA  
5.0µA  
50µA  
IR  
DIMENSIONS  
INCHES  
MIN  
---  
---  
---  
MM  
MIN  
DIM  
A
B
C
D
MAX  
.166  
.079  
.020  
---  
MAX  
4.2  
NOTE  
Maximum Junction  
Capacitance  
Measured at  
---  
---  
CJ  
Trr  
4.0pF  
4.0ns  
1.0MHz, VR=0V  
2.00  
.52  
---  
---  
1.000  
25.40  
IF=10mA; VR = 6V  
RL=100Ω  
Maximum Reverse  
Recovery Time  
*Pulse test: Pulse width 300 µsec, Duty cycle 2%  
Note: 1. Lead in Glass Exemption Applied, see EU Directive Annex 7(C)-I.  
www.mccsemi.com  
Revision: C  
2013/02/18  
1 of 4  

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