1N4148UBCA

更新时间： 2024-11-17 22:15:35

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
19页	104K
描述
PERFORMANCE SPECIFICATION

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1N4148UBCA 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.7	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.8 V	JESD-609代码：	e4
最大非重复峰值正向电流：	2 A	最高工作温度：	200 °C
最大输出电流：	0.2 A	最大重复峰值反向电压：	75 V
最大反向恢复时间：	0.005 µs	子类别：	Rectifier Diodes
表面贴装：	YES	端子面层：	Gold (Au) - with Nickel (Ni) barrier
Base Number Matches：	1

1N4148UBCA 数据手册

INCH POUND

The documentation and process conversion

measures necessary to comply with this

revision shall be completed by 8 September 2001.

MIL-PRF-19500/116L

8 June 2001

SUPERSEDING

MIL-PRF-19500/116K

28 February 1997

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING

TYPES 1N914, 1N914UR, 1N4148-1, 1N4148UR-1, 1N4148UB, 1N4148UB2, 1N4148UB2R, 1N4148UBCA,

1N4148UBCC, 1N4148UBCD, 1N4531, AND 1N4531UR, JAN, JANTX, JANTXV, JANHC, AND JANKC

JANS1N4148-1 (see 6.4). Device types 1N914

and 1N4531 are inactive for new design.

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for silicon, diffused, switching diodes. Three

levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product

assurance are provided for each unencapsulated device.

1.2 Physical dimensions. See figures 1 (similar to DO-35), 2, 3, 4, and 5.

1.3 Maximum ratings.

Type

(BR)

RWM

STG

FSM

= 25 C

t =

1/120 s

A (pk)

V dc

V (pk)

C/W

1N914, UR

1N4531, UR

1N4148-1, UR-1

1N4148UB,

100

75 (1)

-65 to +200

-65 to +175

-65 to +200

N/A

150

125 (2)

200 (3)

250

(leaded)

100(UR)

1N4148UB2,

1N4148UB2R,

1N4148UBCA,

1N4148UBCC,

1N4148UBCD,

(1) Derate at 0.5 mA/ C above T_A= 25 C.

(2) Derate at 0.83 mA/ C above T_A= 25 C.

(3) Derate at 1.14 mA/ C above T_A= 25 C.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,

P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal

(DD Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...19

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与1N4148UBCA相关器件

型号	品牌	获取价格	描述	数据表
1N4148UBCC	MICROSEMI	获取价格	PERFORMANCE SPECIFICATION
1N4148UBCCC	MICROSEMI	获取价格	Rectifier Diode, 2 Element, 0.2A, 75V V(RRM), Silicon, CERAMIC, UBC-3
1N4148UBCD	MICROSEMI	获取价格	PERFORMANCE SPECIFICATION
1N4148UR-1	MICROSEMI	获取价格	MINI-MELF-SMD Silicon Diode
1N4148UR-1	CDI-DIODE	获取价格	SWITCHING DIODE
1N4148UR-1_1	MICROSEMI	获取价格	SWITCHING DIODE
1N4148UR-1-TR	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2
1N4148UR-1-TRE3	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2
1N4148VC	ROHM	获取价格	Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35,
1N4148VE	ROHM	获取价格	Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35,

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